A. Refereed Papers:

1. C.-S. Cai, W.-Y. Lai, P.-H. Liu, T.-C. Chou, R.-Y. Liu, C.-M. Lin, S. Gwo, and W.-T. Hsu,^* “Ultralow Auger-assisted interlayer exciton annihilation in WS₂/WSe₂ Moiré heterobilayers,” Nano Lett. vol. 24, pp. 2773–2781 (2024).
2. A. Ghosh, S. N. S. Yadav, M.-H. Tsai, A, Dubey, C.-T. Lin, S. Gwo, T.-J. Yen,^* “Superior visible photoelectric response with Au/Cu₂NiSnS₄ core-shell nanocrystals,” ACS Appl. Mater. Interfaces vol. 16, pp. 12033–12041 (2024).
3. C.-W. Chang, C.-T. Huang, J.-S. Wu, Z.-H. Song, C.-H. Liao, Q. T. Dang, Y.-J. Lu, H. W. H. Lee, H. Ahn, and S. Gwo,^* “Ultrathin titanium nitride epitaxial structures for tunable infrared plasmonics,” J. Phys. Chem. C, vol. 127, pp. 21186–21193 (2023).
4. Y.‐P. Kuang, A. Dubey, R. Ranjan, H.‐Y. Tsai, S. N. S. Yadav, C.‐Y. Chen, S. Gwo, H.‐N. Lin, and T.‐J. Yen,^* “Multifunctional plasmonic sensor for excellent IUV photodetection and NO₂ gas sensing by an array of Al nanocaps on GaN truncated nanocones,” Adv. Opt. Mater. vol. 11, 2300252 (2023).
5. I.-H. Ho, C.-W. Chang, S.-K. Wen, Y.-J. Lu, S. Gwo, and H. Ahn,^* “Transient optical properties of titanium aluminum nitride (Ti_1-xAl_xN) epilayers,^* J. Phys. Chem. C vol. 127, pp. 13731–13739 (2023).
6. Z.-T. Huang, T.-W. Chien, C.-W. Cheng, C.-C. Li, K.-P. Chen, S. Gwo, and T.-C. Lu,^* “Room-temperature gate voltage modulation of plasmonic nanolasers,” ACS Nano vol. 17, pp. 6488–6496 (2023).
7. F. Cao, M. Zhou, C.-W. Cheng, H. Li, Q. Jia, A. Jiang, B. Lyu, D. Liu, D. Han, S. Gwo, and J. Shi,^* “Interaction of plasmonic bound states in the continuum,” Photonics Res. vol. 11, pp. 724–731 (2023).
8. A. Agarwal. Y.-T. Liu, Y.-S. Huang, C.-W. Cheng, S. N. S. Yadav, T.-J. Yen, S. Gwo, M.-Y. Lu,^* and L.-J. Chen,^* “Superb low threshold surface-plasmon polariton ZnO nanolasers on an aluminum film with tailored MoO₃ and Ta₂O₅ dielectric interlayers of varied thickness,” J. Phys. Chem. C vol. 126, pp. 11779–11787 (2022).
9. R. Mishra, A. Dubey, C.-W. Chang, A. Ranjan, M.-Y. Lu, T.-J. Yen, and S. Gwo,^* “Epitaxial TiN/GaN heterostructure for efficient photonic energy harvesting,” ACS Photonics vol. 9, pp. 1895–1901 (2022).
10. L. T. Quynh, C.-W. Cheng, C.-T. Huang, S. S. Raja, R. Mishra, M.-J. Yu, Y.-J. Lu, and S. Gwo,^* “Flexible plasmonics using aluminum and copper epitaxial films on mica,” ACS Nano vol. 16, pp. 5975–5983 (2022).
11. I.-H. Ho, C.-W. Chang, Y.-L. Chen, W.-Y. Chang, T.-J. Kuo, Y.-J. Lu, S. Gwo,^* and H. Ahn,^* “Ultrathin TiN epitaxial films as transparent conductive electrodes,” ACS Appl. Mater. Interfaces vol. 14, pp. 16839–16845 (2022).
12. A. Dubey, R. Mishra, C.-W. Cheng, Y.-P. Kuang, S. Gwo, and T.-J. Yen,^* “Demonstration of a superior deep-UV surface-enhanced resonance Raman scattering (SERRS) substrate and single-base mutation detection in oligonucleotides,” J. Am. Chem. Soc. vol. 143, pp. 19282–19286 (2021).
13. R. Mishra, C.-W. Chang, A. Dubey, Z.-Y. Chiao, T.-J. Yen, H. W. H. Lee, Y.-J. Lu, and S. Gwo,^* “Optimized titanium nitride epitaxial film for refractory plasmonics and solar energy harvesting,” J. Phys. Chem. C vol. 125, pp. 13658–13665 (2021).
14. Y. Ding, C. Wei, H. Su, S. Sun, Z. Tang, Z. Wang, G. Li, D. Liu, S. Gwo, J. Dai, and J. Shi,^* “Second harmonic generation covering the entire visible range from a 2D material–plasmon hybrid metasurface,” Adv. Opt. Mater. vol. 9, 2100625 (2021).
15. K. Minn, A. Anopchenko, Y.-J. Lu, C.-W. Chang, R. Mishra, J. Kim, Z. Zhang, S. Gwo, and H. W. H. Lee,^* “Enhanced spontaneous emission of monolayer MoS₂ on epitaxially grown titanium nitride epsilon-near-zero thin films,” Nano Lett. vol. 21, pp. 4928–4936 (2021).
16. Y. Sang, C.-Y. Wang, S. S. Raja, C.-W. Chang, C.-T. Huang, C.-A. Chen, X.-Q. Zhang, H. Ahn, C.-K. Shih, Y.-H. Lee, J. Shi, and S. Gwo,^* “Tuning of two-dimensional plasmon–exciton coupling in full parameter space: A polaritonic non-Hermitian system,” Nano Lett. vol. 21, pp. 2596–2602 (2021).
17. C.-Y. Wang, Y. Sang, X. Yang, S. S. Raja, C.-W. Cheng, H. Li, Y. Ding, S. Sun, H. Ahn, C.-K. Shih,^* S. Gwo,^* and J. Shi,^* “Engineering giant Rabi splitting via strong coupling between localized and propagating plasmon modes on metal surface lattices: observation of ÖN scaling rule,” Nano Lett. vol. 21, pp. 605–611 (2021).
18. S. Sun, Y. Ding, H. Li, P. Hu, C.-W. Cheng, Y. Sang, F. Cao, Y. Hu, A. Alù, D. Liu, Z. Wang, S. Gwo,^* D. Han,^* and J. Shi,^* “Tunable plasmonic bound states in the continuum in the visible range,” Phys. Rev. B vol. 103, 045416 (2021).
19. H. Li, Z.-T. Huang, K.-B. Hong, J.-W. Chen, C.-W. Cheng, K.-P. Chen, T.-R. Lin, S. Gwo, and T.-C. Lu,^* “Room‐temperature active modulation of plasmonic nanolasers by current injection on hybrid graphene-insulator-metal platforms,” J. App. Phys. vol. 129, 053307 (2021).
20. C.-H. Mao, A. Dubey, F.-J. Lee, C.-Y. Chen, S.-Y. Tang, A. Ranjan, M.-Y. Lu, Y.-L. Chueh, S. Gwo, and T.-J. Yen,^* “An ultrasensitive gateless photodetector based on the 2D bilayer MoS₂–1D Si nanowire–0D Ag nanoparticle hybrid structure,” ACS Appl. Mater. Interfaces vol. 13, pp. 4126–4132 (2021).
21. C.-W. Cheng, S. S. Raja, C.-W. Chang, X.-Q. Zhang, P.-Y. Liu, Y.-H. Lee, C.-K. Shih, and S. Gwo,^* “Epitaxial aluminum plasmonics covering full visible spectrum,” Nanophotonics vol. 10, pp. 627–637 (2021).
22. S. S. Raja, C.-W. Cheng, and S. Gwo,^* “Low-loss aluminum epitaxial film for scalable and sustainable plasmonics: Direct comparison with silver epitaxial film,” Nanoscale vol. 12, pp. 23809–23816 (2020).
23. A. Dubey, R. Mishra, Y.-H. Hsieh, C.-W. Cheng, B.-H. Wu, L.-J. Chen, S. Gwo,^* and T.-J. Yen,^* “Aluminum plasmonics enriched ultraviolet GaN photodetector with ultrahigh responsivity, detectivity, and broad bandwidth,” Adv. Sci. 2002274 (2020).
24. H. Li, Z.-T. Huang, K.-B. Hong, C.-Y. Hsu, J.-W. Chen, C.-W. Cheng, K.-P. Chen, T.-R. Lin, S. Gwo, and T.-C. Lu,^* “Current modulation of plasmonic nanolasers by breaking reciprocity on hybrid graphene–insulator–metal platforms,” Adv. Sci. 2001823 (2020).
25. J. Choi, W.-T. Hsu, L.-S. Lu, L. Sun, H.-Y. Cheng, M.-H. Lee, J. Quan, K. Tran, C.-Y. Wang, M. Staab, K. Jones, T. Taniguchi, K. Watanabe, M.-W. Chu, S. Gwo, S. Kim, C.-K. Shih, X. Li,^* W.-H. Chang,^* “Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures,” Sci. Adv. vol. 6, eaba8866 (2020).
26. A. Agarwal, W.-Y. Tien, Y.-S. Huang, R. Mishra, C.-W. Cheng, S. Gwo, M.-Y. Lu, and L.-J. Chen,^* “ZnO nanowires on single-crystalline aluminum film coupled with an insulating WO₃ interlayer manifesting low threshold SPP laser operation,” Nanomaterials vol. 10, 1680 (2020).
27. W.-Y. Ko, M.-J. Fang, M.-S. Li, W.-C. Hsu, Y.-W. Huang, C.-W. Cheng, B.-J. Hwang, S. Gwo, and K.-J. Lin,^* “A pearl-chain-like anode composed of silicon-porphyrin hits peaks in lithium-ion capacity,” ACS Appl. Energy Mater. vol. 3, pp. 6098–6106 (2020).
28. S. S. Raja, C.-W. Cheng, Y. Sang, C.-A. Chen, X.-Q. Zhang, A. Dubey, T.-J. Yen, Y.-M. Chang, Y.-H. Lee, and S. Gwo,^* “Epitaxial aluminum surface-enhanced Raman spectroscopy substrates for large-scale 2D material characterization,” ACS Nano vol. 14, pp. 8838–8845 (2020).
29. W.-P. Guo, W.-Y. Liang, C.-W. Cheng, W.-L. Wu, Y.-T. Wang, Q. Sun, S. Zu, H. Misawa, P.-J. Cheng, S.-W. Chang, H. Ahn,^* M.-T. Lin,^* and S. Gwo,^* “Chiral second-harmonic generation from monolayer WS₂/aluminum plasmonic vortex metalens,” Nano Lett. vol. 20, pp. 2857–2864 (2020).
30. J. Choi, F. Cheng, J. W. Cleary, L. Sun, C. K. Dass, J. R. Hendrickson, C.-Y. Wang, S. Gwo, C.-K. Shih, and X. Li,^* “Optical dielectric constants of single crystalline silver films in the long wavelength range,” Opt. Mater. Express vol. 10, pp. 693–703 (2020).
31. W.-P. Guo, R. Mishra, C.-W. Cheng, B.-H. Wu, L.-J. Chen, M.-T. Lin, and S. Gwo,^* “Titanium nitride epitaxial films as a plasmonic material platform: Alternative to gold,” ACS Photonics vol. 6, pp. 1848–1854 (2019).
32. P.-Y. Chen, X.-Q. Zhang, Y.-Y. Lai, E.-C. Lin, C.-A. Chen, S.-Y. Guan, J.-J. Chen, Z.-H. Yang, Y.-W. Tseng, S. Gwo, C.-S. Chang, L.-J. Chen,^* and Y.-H. Lee,^* “Tunable Moiré superlattice of artificially twisted monolayers,” Adv. Mater. vol. 31, 1901077 (2019).
33. H. Li, J.-H. Li, K.-B. Hong, M.-W. Yu, Y.-C. Chun, C.-Y. Hsu, J.-H. Yang, C.-W. Cheng, Z.-T. Huang, K.-P. Chen, T.-R. Lin, S. Gwo, and T.-C. Lu,^* “Plasmonic nanolasers enhanced by hybrid graphene-insulator-metal structures,” Nano Lett. vol. 19, pp. 5017–5024 (2019).
34. Y.-J. Liao, C.-W. Cheng, B.-H. Wu, C.-Y. Wang, C.-Y. Chen, S. Gwo,^* and L.-J. Chen,^* “Low threshold room-temperature UV surface plasmon polariton lasers with ZnO nanowires on single-crystal aluminum films with Al₂O₃ interlayers,” RSC Advances vol. 9, pp. 13600–13607 (2019).
35. L. Sun, C.-Y. Wang, A. Krasnok, J. Choi, J. Shi, J. S. Gomez-Diaz, A. Zepeda, S. Gwo, C.-K. Shih, A. Alù,^* and X. Li,^* “Separation of valley excitons in a MoS₂ monolayer using a subwavelength asymmetric groove array,” Nature Photonics vol. 13, pp. 180–184 (2019).
36. F. Cheng, C.-J. Lee, J. Choi, C.-Y. Wang, Q. Zhang, H. Zhang, S. Gwo, W.-H. Chang, X. Li, C.-K. Shih,^* “Epitaxial growth of optically thick, single crystalline silver films for plasmonics,” ACS Appl. Mater. Interfaces vol. 11, pp. 3189–3195 (2019).
37. S. K. Rai, K.-W. Kao, S. Gwo, A. Agarwal, W. D. Lin, and J. A. Yeh,^* “Indium nitride (InN)-based ultrasensitive and selective ammonia sensor using an external silicone oil filter for medical application,” Sensors vol. 18, 3887 (2018).
38. J. Shi, W.-Y. Liang, S. S. Raja, Y. Sang, X.-Q. Zhang, C.-A. Chen, Y. Wang, X. Yang, Y.-H. Lee,^* H. Ahn,^* and S. Gwo,^* “Plasmonic enhancement and manipulation of optical nonlinearity in monolayer WS₂,” Laser Photonics Rev. vol. 12, 1800188 (2018).
39. Y. Sang; X. Wu; S. S. Raja; C.-Y. Wang; H. Li; Y. Ding; D. Liu; J. Zhou; H. Ahn; S. Gwo,^* and J. Shi,^* “Broadband multifunctional plasmonic logic gates,” Adv. Opt. Mater. vol. 6, 1701368 (2018).
40. C.-W. Cheng, Y.-J. Liao, C.-Y. Liu, B.-H. Wu, S. S. Raja, C.-Y. Wang, X. Li, C.-K. Shih, L.-J. Chen,^* and S. Gwo,^* “Epitaxial aluminum-on-sapphire films as a plasmonic material platform for ultraviolet and full visible spectral regions,” ACS Photonics vol. 5, pp. 2624–2630 (2018).
41. S. K. Rai, K. W. Kao, A. Agarwal, S. Gwo, A. Kumar, and J. A. Yeh,^* “Platinum coating of an ultrathin InN epilayer as a dual gas sensor for selective sensing of ammonia and acetone by temperature modulation for liver malfunction and diabetics applications,” ECS J. Solid State Sci. Technol. vol. 7, pp. Q3221–Q3229 (2018).
42. S. K. Rai, F. Yang, K. W. Kao, A. Agarwal, S. Gwo, and J. A. Yeh,^* “Pentacene coated atop of ultrathin InN gas sensor device for the selective sensing of ammonia gas for liver malfunction application,” ECS J. Solid State Sci. Technol. vol. 7, pp. Q3208–Q3214 (2018).
43. Y.-H. Chou, K.-B. Hong, C.-T. Chang, T.-C. Chang, Z.-T. Huang, P.-J. Cheng, J.-H. Yang, M.-H. Lin, T.-R. Lin, K.-P. Chen, S. Gwo, and T.-C. Lu,^* “Ultracompact pseudowedge plasmonic lasers and laser arrays,” Nano Lett. vol. 18, pp. 747–753 (2018).
44. L. Y. Chang, Y.-C. Kuo, H. W. Shiu, C.-H. Wang, Y.-C. Lee, Y.-W. Yang, S. Gwo, and C.-H. Chen,^* n-Alkanethiols directly grown on a bare Si(111) surface: From disordered to ordered transition,” Langmuir vol. 33, pp. 14244–14251 (2017).
45. G. Cheng, W. Qin, M.-H. Lin, L. Wei, X. Fan, H. Zhang, S. Gwo, C. Zeng,^* J. G. Hou, and Z. Zhang, “Substantially enhancing quantum coherence of electrons in graphene via electron-plasmon coupling,” Phys. Rev. Lett. vol. 119, 156803 (2017).
46. L. Sun, C. Zhang, C.-Y. Wang, P.-H. Su, M. Zhang, S. Gwo, C.-K. Shih, X. Li, and Y. Wu,^* “Enhancement of plasmonic performance of epitaxial silver at low temperature,” Sci. Rep. vol. 7, 8917 (2017).
47. J. Shi, M.-H. Lin, I-T. Chen, N. Mohammadi Estakhri, X.-Q. Zhang, Y. Wang, H.-Y. Chen, C.-A. Chen, C.-K. Shih, A. Alù, X. Li,^* Y.-H. Lee,^* and S. Gwo,^* “Cascaded exciton energy transfer in a monolayer semiconductor lateral heterostructure assisted by surface plasmon polariton,” Nature Commun. vol. 8, 35 (2017).
48. P. A. Dementev, T. V. Lvova, V. Yu. Davydov, A. N. Smirnov, V. V. Shnitov, M. V. Lebedev,^* and S. Gwo, “Chemical modification of InN surface with sulfide solution,” Appl. Surf. Sci. vol. 422, pp. 1052–1058 (2017).
49. C.-J. Lee, H. Yeh, F. Cheng, P.-H. Su, T.-H. Her, Y.-C. Chen, C.-Y., Wang, S. Gwo, S. R. Bank, C.-K. Shih, and W.-H. Chang,^* “Low threshold plasmonic lasers on single crystalline epitaxial silver platform at telecom wavelength,” ACS Photonics vol. 4, pp. 1431–1439 (2017).
50. H. Shen, L. Chen, L. Ferrari, M.-H. Lin, N. A. Mortensen, S. Gwo, and Z. Liu,^* “Optical observation of plasmonic nonlocal effects in a 2D superlattice of ultrasmall gold nanoparticles,” Nano Lett. vol. 17, pp. 2234–2239 (2017).
51. H. Eisele,^* J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, A. Hoffmann, S. Gwo, S. Choi, J. S. Speck, R. E. Dunin-Borkowski, and Ph. Ebert, “Intrinsic electronic properties of high-quality wurtzite InN,” Phys. Rev. B vol. 94, 245201 (2016).
52. C.-S. Tan, Y.-J. Lu, C.-C. Chen, P.-H. Liu, S. Gwo, G.-Y. Guo,^* and L.-J. Chen,^* “Magnetic MoS₂ interface monolayer on a CdS nanowire by cation exchange,” J. Phys. Chem. C vol. 120, pp. 23055–23060 (2016).
53. F. Cheng, P.-H. Su, J. Choi, S. Gwo, X. Li, and C.-K. Shih,^* “Epitaxial Growth of atomically smooth aluminum on silicon and its intrinsic optical properties,” ACS Nano, vol. 10, pp. 9852–9860 (2016).
54. (Invited Review) S. Gwo,^* H.-Y. Chen, M.-H. Lin, L. Sun, and X. Li,^* “Nanomanipulation and controlled self-assembly of metal nanoparticles and nanocrystals for plasmonics,” Chem. Soc. Rev. vol. 45, pp. 5672–5716 (2016).
55. (Invited Review) S. Gwo,^* C.-Y. Wang, H.-Y. Chen, M.-H. Lin, L. Sun, X. Li, W.-L. Chen, Y.-M. Chang, and H. Ahn, “Plasmonic metasurfaces for nonlinear optics and quantitative SERS,” ACS Photonics vol. 3, pp. 1371–1384 (2016).
56. (Invited Review) S. Gwo^* and C.-K. Shih,^* “Semiconductor plasmonic nanolasers: Current status and perspectives,” Rep. Prog. Phys. vol. 79, 086501 (2016).
57. S. Huang,^* C.-Y. Wang, H.-Y. Chen, M.-H. Lin, Y.-J. Lu, and S. Gwo,^* “Dual-band planar plasmonic unidirectional launching in a semiannular apertures array,” ACS Photonics vol. 3, pp. 584–589 (2016).
58. M.-Y. Lu,^* C.-Y. Tsai, H.-A. Chen, Y.-T. Liang, K.-P. Chen, S. Gradečak, S. Gwo, and L.-J. Chen, “Plasmonic enhancement of Au nanoparticle–embedded single-crystalline ZnO nanowire dye-sensitized solar cells,” Nano Energy vol. 20, pp. 264–271 (2016).
59. J.-C. Lin, V. T. Tra, D.-S. Tsai, T.-T. Lin, P.-C. Huang, W.-L. Hsu, H. J. Wu, R. Huang, N. V. Chien, R. Yoshida, J.-Y. Lin, Y. Ikuhara, Y.-P. Chiu, S. Gwo, D. P. Tsai, J.-H. He, and Y.-H. Chiu,^* “Control of the metal–insulator transition at complex oxide heterointerfaces through visible light,” Adv. Mater. vol. 28, pp. 764–770 (2016).
60. H.-Y. Chen,^* M.-H. Lin, C.-Y. Wang, Y.-M. Chang, and S. Gwo,^* “Large-scale hot spot engineering for quantitative SERS at the single-molecule scale,” J. Am. Chem. Soc. vol. 137, pp. 13698–13705 (2015).
61. C.-S. Tan, H.-Y. Chen, H.-S. Chen, S. Gwo, and L.-J Chen,^* “Intermediates in the cation reactions in solution probed by an in situ surface enhanced Raman scattering method,” Sci. Rep. vol. 5, 13759 (2015).
62. C.-Y. Wang, H.-Y. Chen, L. Sun, W.-L. Chen, Y.-M. Chang, H. Ahn, X. Li,^* and S. Gwo,^* “Giant colloidal silver crystals for low-loss linear and nonlinear plasmonics,” Nature Commun. vol. 6, 7734 (2015).
63. K.-I. Lin,^* Y.-J. Chen, Y.-C. Cheng, and S. Gwo, “Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy,” Jap. J. Appl. Phys. vol. 54, 031001 (2015).
64. X. Zhou, M.-Y. Lu, Y.-J. Lu, E. J. Jones, S. Gwo, S. Gradečak,^* “Nanoscale optical properties of indium gallium nitride/gallium nitride nanodisk-in-rod heterostructures,” ACS Nano vol. 9, 2868–2875 (2015).
65. C.-Y. Yang, C.-T. Chia, H.-Y. Chen, S. Gwo, and K.-H. Lin,^* “Ultrafast carrier dynamics in GaN nanorods,” Appl. Phys. Lett. vol. 105, 212105 (2014).
66. Y.-J. Lu, C.-Y. Wang, J. Kim, H.-Y. Chen, M.-Y. Lu, Y.-C. Chen, W.-H. Chang, L.-J. Chen, M. I. Stockman, C.-K. Shih,^* and S. Gwo,^* “All-color plasmonic nanolasers with ultralow thresholds: Autotuning mechanism for single-mode lasing,” Nano Lett. vol. 14, pp. 4381–4388 (2014).
67. Y.-C. Yen, J.-Z. Chen, Y.-J. Lu, S. Gwo, and K.-J. Lin,^* “Chain-network anatase/TiO₂ (B) thin film with improved photocatalytic efficiency,” Nanotechnology vol. 25, 235602 (2014).
68. S.-C. Wang, M.-Y. Lu, A. Manekkathodi, P.-H. Liu, H.-C. Lin, W.-S. Li, T.-C. Hou, S. Gwo, L.-J. Chen,^* “Complete replacement of metal in metal oxide nanowires via atomic diffusion: In/ZnO case study,” Nano Lett. vol. 14, pp. 3241–3246 (2014).
69. H.-Y. Hsueh, H.-Y. Chen, Y.-C. Ling, W.-S. Huang, Y.-C. Hung, S. Gwo, and R.-M. Ho,^* “A polymer-based SERS-active substrate with gyroid-structured gold multibranches,” J. Mater. Chem. C vol. 2, pp. 4667–4675 (2014).
70. Y.-C. Yang, H.-J. Wang, J. Whang, J.-S. Huang, L.-M. Lyu, P-H. Lin, S. Gwo, and M. H. Huang,^* “Facet-dependent optical properties of polyhedral Au–Cu₂O core-shell nanocrystals,” Nanoscale vol. 6, 4316–4324 (2013).
71. A. Manekkathodi, Y.-J Wu, L.-W. Chu, S. Gwo, L.-J. Chou, and L.-J. Chen,^* “Integrated optical waveguide and photodetector arrays based on comb-like ZnO structures,” Nanoscale vol. 5, 12185–12191 (2013).
72. H.-W. Shiu, L.-Y. Chang, K.-H. Lee, H.-Y. Chen, S. Gwo, and C.-H. Chen,^* “Graphene as tunable transparent electrode material on GaN: Layer-number-dependent optical and electrical properties,” Appl. Phys. Lett. vol. 103, 081604 (2013).
73. Y.-J. Lu, M.-Y. Lu, Y.-C Yang, H-Y. Chen, L.-J. Chen, and S. Gwo,^* “Dynamic visualization of axial p–n junctions in single gallium nitride nanorods under electrical bias,” ACS Nano, vol. 7, pp. 7640–7647 (2013).
74. W.-L. Liu, F.-C. Lin, Y.-C. Yang, C.-H. Huang, S. Gwo, M. H. Huang and J.-S. Huang,^* “The influence of shell thickness of Au@TiO₂ core–shell nanoparticles on the plasmonic enhancement effect in dye-sensitized solar cells,” Nanoscale vol. 5, pp. 7953–7962 (2013).
75. X. Zhou, M.-Y. Lu, Y.-J. Lu, S. Gwo, and S. Gradecak,^* “Correlation of doping, structure, and carrier dynamics in a single GaN nanorod,” Appl. Phys. Lett. vol. 102, 253104 (2013).
76. H. Ahn,^* Y.-S. Liu, K.-Y. Chang, and S. Gwo, “Photoluminescence from InN nanorod arrays with a critical size,” Appl. Phys. Express vol. 6, 062103 (2013).
77. Y.-K. Lin, H.-W. Ting, C.-Y. Wang, S. Gwo, L.-J. Chou, C.-J. Tsai, and L.-J. Chen,^* “Au nanocrystal array/silicon nanoantennas as wavelength-selective photoswitches,” Nano Lett. vol. 13, pp. 2723–2731 (2013).
78. H.-Y. Hsueh, H.-Y. Chen, Y.-C. Hung, Y.-C. Ling, S. Gwo, and R.-M. Ho,^* “Well-defined multibranched gold with surface plasmon resonance in near-infrared region from seeding growth approach using gyroid block copolymer templates,” Adv. Mater. vol. 25, pp. 1780–1786 (2013).
79. C.-S. Chiu, H.-Y. Chen, C.-F. Hsiao, M.-H. Lin, and S. Gwo,^* “Ultrasensitive surface acoustic wave detection of collective plasmonic heating by close-packed colloidal gold nanoparticles arrays,” J. Phys. Chem. C vol. 117, pp. 2442–2448 (2013).
80. H. Ahn,^* J.-W. Chia, H.-M. Lee, and S. Gwo, “Influence of structural anisotropy to anisotropic electron mobility in a-plane InN,” Appl. Phys. Lett. vol. 102, 061904 (2013).
81. B.-H. Li, C. E. Sanders, J. McIlhargey, F. Cheng, C. Gu, G. Zhang, K. Wu, J. Kim, S. H. Mousavi, A. B. Khanikaev, Y.-J. Lu, S. Gwo, G. Shvets, C.-K. Shih,^* and X. Qiu,^* “Contrast between surface plasmon polariton-mediated extraordinary optical transmission behavior in epitaxial and polycrystalline Ag films in the mid- and far-infrared regimes,” Nano Lett. vol. 12, pp. 6187–6191 (2012).
82. Y.-S. Lu, C.–H. Hsieh, S. Gwo, M. T. Hou, J.-S. Yao, and J. A. Yeh,^* “An investigation of the Young's modulus of single-crystalline wurtzite indium nitride using an atomic microscopy based micromechanical bending test,” Appl. Phys. Lett. vol. 101, 221906 (2012).
83. P.-A. Mante, H.-Y. Chen, M.-H. Lin, Y.-C. Wen, S. Gwo, and C.-K. Sun,^* “Selectively probing vibrations in a plasmonic supracrystal,” Appl. Phys. Lett. vol. 101, 101903 (2012).
84. Y.-J. Lu, J. Kim, H.-Y. Chen, C. Wu, N. Dabidian, C. E. Sanders, C.-Y. Wang, M.-Y. Lu, B.-H. Li, X. Qiu, W.-H. Chang, L.-J. Chen, G. Shvets, C.-K. Shih,^* and S. Gwo,^* “Plasmonic nanolaser using epitaxially grown silver film,” Science vol. 337, pp. 450–453 (2012).
85. S. Gwo,^* M.-H. Lin, C.-L. He, H.-Y. Chen, and T. Teranishi, “Bottom-up assembly of colloidal gold and silver nanostructures for designable plasmonic structures and metamaterials,” Langmuir vol. 28, pp. 8902–8908 (2012).
86. K.-W. Kao, M.-C. Hsu, Y.-H. Chang, S. Gwo, and J. A. Yeh,^* “A sub-ppm acetone gas sensor for diabetes detection using 10 nm thick ultrathin InN FETs,” Sensors vol. 12, pp. 7157–7168 (2012).
87. S.-C. Lin, C.-T. Kuo, X. Liu, L.-Y. Liang, C.-H. Cheng, C.-H. Lin, S.-J. Tang, L.-Y. Chang, C.-H. Chen, and S. Gwo,^* “Experimental determination of electron affinities for InN and GaN polar surfaces,” Appl. Phys. Express vol. 5, 031003 (2012).
88. H. Ahn,^* C.-C. Yu, P. Yu, J. Tang, Y.-L. Hong, and S. Gwo, “Carrier dynamics in InN nanorod arrays,” Optics Express vol. 20, pp. 769–775 (2012).
89. H. Ahn,^* J.-W. Chia, H.-M. Lee, Y.-L. Hong, and S. Gwo, “Mg-induced terahertz transparency of indium nitride films,” Appl. Phys. Lett. vol. 99, 232117 (2011).
90. S.-Y. Chen, P.-H. Yeh, W.-W. Wu, U.-S. Chen, Y.-L. Chueh, Y.-C. Yang, S. Gwo, and L.-J. Chen,^* “Low resistivity metal silicide nanowires with extraordinarily high aspect ratio for future nanoelectronic devices,” ACS Nano vol. 5, pp. 9202–9207 (2011).
91. K.-I. Lin,^* J.-T. Tsai, I.-C. Su, J.-S. Hwang, and S. Gwo, “Photoreflectance study of InN films with In and N polarities,” Appl. Phys. Express vol. 4, 112601 (2011).
92. X. Chen, A M. C. Ng, F. Fang, Y. H. Ng, A. B. Djurišić,^* H. L. Tam, K. W. Cheah, S. Gwo, W. K. Chan, P. W. K. Fong, H. F. Lui, C. Surya, “ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias,” J. Appl. Phys. vol. 110, 094513 (2011).
93. H.-Y. Chen, C.-L. He, C.-Y. Wang, M.-H. Lin, D. Mitsui, M. Eguchi, T. Teranishi, and S. Gwo,^* “Far-field optical imaging of a linear array of coupled gold nanocubes: Direct visualization of dark plasmon propagating modes,” ACS Nano vol. 5, pp. 8223–8229 (2011).
94. C.-Y. Wu, C.-T. Kuo, C.-Y. Wang, C.-L. He, M.-H. Lin, H. Ahn, and S. Gwo,^* “Plasmonic green nanolaser based on a metal-oxide-semiconductor structure,” Nano Lett. vol. 11, pp. 4256–4260 (2011).
95. C.-T. Kuo, K.-K. Chang, H.-W. Shiu, C.-R. Liu, L.-Y. Chang, C.-H. Chen, and S. Gwo,^* “Natural band alignments of InN/GaN/AlN nanorod heterojunctions,” Appl. Phys. Lett. vol. 99, 122101 (2011).
96. C.-T. Kuo, K.-K. Chang, H.-W. Shiu, S.-C. Lin, C.-H. Chen, and S. Gwo,^* “Spontaneous-polarization-induced heterojunction asymmetry in III-nitride semiconductors,” Appl. Phys. Lett. vol. 99, 022113 (2011).
97. Y.-E. Su, Y.-C. Wen, Y.-L. Hong, H.-M. Lee, S. Gwo, Y.-T. Lin, L.-W. Tu, H.-L. Liu, and C.-K. Sun,^* “Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN,” Appl. Phys. Lett. vol. 98, 252106 (2011).
98. Y.-J. Lu, H.-W. Lin, H.-Y. Chen, Y.-C. Yang, and S. Gwo,^* “Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources,” Appl. Phys. Lett. vol. 98, 233101 (2011). [Cover of the 6 June 2011 issue; Highlighted by PhysOrg.com (16 June 2011), NPG Asia Materials (October 2011), and Optics & Photonic Focus (16 November 2011)]
99. T. Teranishi,^* M. Eguchi, M. Kanehara, and S. Gwo, “Controlled localized surface plasmon resonance wavelength for conductive nanoparticles over the ultraviolet to near-infrared region,” J. Mater. Chem. vol. 21, pp. 10238–10242 (2011).
100. Y.-H. Chang, Y.-S. Lu, Y.-L. Hong, S. Gwo, and J. A. Yeh,^* “Highly sensitive pH sensing using an indium nitride ion-sensitive field-effect transistor,” IEEE Sensors Journal, vol. 11, pp. 1157–1161 (2011).
101. C.-H. Kuo, Y.-C. Yang, S. Gwo,^* and M. Huang,^* “Facet-dependent and Au nanocrystal-enhanced electrical and photocatalytic properties of Au–Cu₂O core–shell heterostructures,” J. Am. Chem. Soc. vol. 133, pp. 1052–1057 (2011).
102. Ph. Ebert,^* S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dähne, Y.-L. Hong, S. Gwo, and H. Eisele, “Direct measurement of the band gap and Fermi level position at InN(11-20),” Appl. Phys. Lett. vol. 98, 062103 (2011).
103. C.-T. Kuo, S.-C. Lin, K.-K. Chang, H.-W. Shiu, L.-Y. Chang, C.-H. Chen, S.-J. Tang, and S. Gwo,^* “Is electron accumulation universal at InN polar surfaces?”Appl. Phys. Lett. vol. 98, 052101 (2011).
104. H.-Y. Hsueh, H.-Y. Chen, M.-S. She, C.-K. Chen, R.-M. Ho,^* S. Gwo, H. Hasegawa, and E. L. Thomas, “Inorganic gyroid with exceptionally low refractive index from block copolymer templating,” Nano Lett. vol. 10, pp. 4994–5000 (2010).
105. H. Ahn,^* Y.-J. Yeh, Y.-L. Hong, S. Gwo, “Background and photoexcited carrier dependence of terahertz radiation from Mg-doped nonpolar indium nitride films,” Appl. Phys. Express vol. 3, 122105 (2010).
106. Y.-H. Chang, K.-K. Chang, S. Gwo, and J. A. Yeh,^* “Highly sensitive hydrogen detection using a Pt-catalyzed InN epilayer,” Appl. Phys. Express vol. 3, 114101 (2010).
107. S. S. Nekrashevich,^* V. A. Gritsenko, R. Klauser, and S. Gwo, “Electronic structure of silicon nitride according to ab initio quantum-chemical calculations and experimental data, “Journal of Experimental and Theoretical Physics vol. 111, pp. 659–666 (2010).
108. J.-S. Hwang,^* J.-T. Tsai, K.-I. Lin, M.-H. Lee, C.-N. Tsai, H.-W. Lin, S. Gwo, M.-C. Chen, “Terahertz radiation mechanism of native n-type InN with different carrier concentrations,” Appl. Phys. Express vol. 3, 102202 (2010).
109. M.-H. Lin, H.-Y. Chen, and S. Gwo,^* “Layer-by-layer assembly of three-dimensional colloidal supercrystals with tunable plasmonic properties,” J. Am. Chem. Soc. vol. 132, pp. 11259–11263 (2010).
110. H.-W. Lin, Y.-J. Lu, H.-Y. Chen, H.-M. Lee, and S. Gwo,^* “InGaN/GaN nanorod array white light-emitting diode,” Appl. Phys. Lett. vol. 97, 073101 (2010). [Cover of the 16 August issue; Highlighted in Semiconductor Today (September), Nature Nanotechnology (October), Laser Focus World (October), and Nature Photonics (November)]
111. H. Ahn,^* Y.-J. Yeh , Y.-L. Hong , S. Gwo, “Carrier dynamics of Mg-doped indium nitride” Appl. Phys. Lett. vol. 97, 062110 (2010).
112. C.-Y. Wu, C.-L. He, H.-M. Lee, H.-Y. Chen, and S. Gwo,^{* “}Surface-plasmon-mediated photoluminescence enhancement from red-emitting InGaN coupled with colloidal gold nanocrystals,” J. Phys. Chem. C vol. 114, pp. 12987–12993 (2010).
113. W. Y. Tong, H. Y. Chen, A. B. Djurišić,^* A. M. C. Ng, H. Wang, S. Gwo, W. K. Chan “Infrared photoluminescence from a- and b-copper phthalocyanine nanostructures,” Optical Materials vol. 32, pp. 924–927 (2010).
114. C.-S. Chiu, H.-M. Lee, and S. Gwo,^* “Site-selective bofunctionalization of aluminum nitride surfaces using patterned organosilane self-assembled monolayers,” Langmuir vol. 26, pp. 2969–2974 (2010).
115. Y.-H. Chang, Y.-S. Lu, Y.-L. Hog, C.-T. Kuo, S. Gwo, and J. A. Yeh,^* “Effects of (NH₄)₂S_x treatment on InN surfaces,” J. Appl. Phys. vol. 107, 043710 (2010).
116. Y.-E. Su, Y.-C. Wen, H.-M. Lee, S. Gwo, and C.-K. Sun,^* “Observation of sub-100 femtosecond electron cooling time in InN,” Appl. Phys. Lett. vol. 96, 052108 (2010).
117. V. Yu. Davydov,^* A. A. Klochikhin, A. N. Smirnov, I. Yu. Strashkova, A. S. Krylov, H. Lu, W. J. Schaff, H.-M. Lee, Y.-L. Hong, and S. Gwo, “Resonant Raman scattering and dispersion of polar optical and acoustic phonons in hexagonal InN,” Semiconductor vol. 44, pp. 161–170 (2010).
118. S.-C. Yang, H. Kobori, C.-L. He, M.-H. Lin, H.-Y. Chen, C. Li, M. Kanehara, T. Teranishi, and S. Gwo,^* “Plasmon hybridization in individual gold nanocrystal dimers: Direct observation of bright and dark modes,” Nano Lett. vol. 10, pp. 632–637 (2010).
119. Y.-M. Chang,^* S. C. Liou, C. H. Chen, H.-M. Lee, and S. Gwo, “The electrostatic coupling of longitudinal optical phonon and plasmon in wurtzite InN thin films,” Appl. Phys. Lett. vol. 96, 041908 (2010).
120. C.-Y. Hsu, J.-W. Huang, S. Gwo, K.-J. Lin,^* “The facile fabrication of tunable plasmonic gold nanostructure arrays using microwave plasma,” Nanotechnology vol. 21, 035302 (2010).
121. B.-H. Chu, H.-W. Lin, S. Gwo, Y.-L. Wang, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicuni, and F. Ren,^* “Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors, J. Vac. Sci. Technol. B vol. 28, pp. L5–L8 (2010).
122. H. Ahn,^* Y.-J. Yeh , Y.-L. Hong , S. Gwo, “Terahertz emission mechanism of magnesium doped indium nitride,” Appl. Phys. Lett. vol. 95, 232104 (2009).
123. H.-M. Lee, C.-T. Kuo, H.-W. Shiu, C.-H. Chen, and S. Gwo,^* “Valence band offset and interface stoichiometry at epitaxial Si₃N₄/Si(111) heterojunctions formed by plasma nitridation,” Appl. Phys. Lett. vol. 95, 222104 (2009).
124. A. M. C. Ng, Y. Y. Xi, Y. F. Hsu, A. B. Djurišić,^* W. K. Chan, S. Gwo, H. L. Tam, K. W. Cheah, P. W. K. Fong, H. F. Lui, and C. Surya, “GaN/ZnO nanorod light emitting diodes with different emission spectra,” Nanotechnology vol. 20, 445201 (2009).
125. T.-R. Tsai,^* C.-Y. Chang, C.-W. Kuo, J.-S. Hwang, T.-Y. Lin, and S. Gwo, “Spectral dependence of time-resolved photoreflectance of InN epitaxial films,” Appl. Phys. Lett. vol. 95, 142108 (2009).
126. J.-W. Su, S. Gwo, and K.-J. Lin,^* “Well-aligned multi-walled carbon nanotubes emitting natural white-light under microwave irradiation,” Chem. Commun. pp. 6777–6779 (2009).
127. C.-C. Hong, H. Ahn,^* C.-Y. Wu, and S. Gwo, “Strong green photoluminescence from In_xGa_1-xN/GaN nanorod arrays,” Optics Express vol. 17, pp. 17227–17233 (2009).
128. Y.-S. Lu, Y.-H. Chang, Y.-L. Hong, H.-M. Lee, S. Gwo, and J. A. Yeh,^* “Investigation on -c-InN and a-InN:Mg field effect transistors under electrolyte gate bias,” Appl. Phys. Lett. vol. 95, 102104 (2009).
129. V. Yu. Davydov,^* A. A. Klochikhin, A. N. Smirnov, I. Yu. Strashkova, A. S. Krylov, H. Lu, W. J. Schaff, H.-M. Lee, Y.-L. Hong, and S. Gwo, “Selective excitation of E₁(LO) and A₁(LO) phonons with large wave vectors in the Raman spectra of hexagonal InN,” Phys. Rev. B (Rapid Communication) vol. 80, 081204(R) (2009).
130. M.-H. Lin, C.-F. Chen, H.-W. Shiu, C.-H. Chen, and S. Gwo,^* “Multilength-scale chemical patterning of self-assembled monolayers by spatially controlled plasma exposure: Nanometer to centimeter range,” J. Am. Chem. Soc. vol. 131, pp. 10984–10991 (2009).
131. C.-T. Kuo, H.-M. Lee, H.-W. Shiu, C.-H. Chen, and S. Gwo,^* “Direct imaging of GaN p-n junction by cross-sectional scanning photoelectron microscopy and spectroscopy,” Appl. Phys. Lett. vol. 94, 122110 (2009).
132. Y.-M. Chang^* and S. Gwo, “Carrier and phonon dynamics of wurtzite InN nanorods,” Appl. Phys. Lett. vol. 94, 071911 (2009).
133. H.-S. Chang, T. M. Hsu,^* T.-F. Chuang, W.-Y. Chen, S. Gwo, and C.-H. Shen, “Localized states in In_xGa_1–xN epitaxial film,” Solid State Communications vol. 149, pp. 18–20 (2009).
134. A. A. Gutkin, M. E. Rudinsky, P. N. Brunkov, A. A. Klochikhin, V. Yu. Davydov,^* H.-Y. Chen, and S. Gwo, “Surface states on the n-InN-electrolyte interface,” Semiconductor vol. 42, pp. 1416–1419 (2008).
135. J.-W. Su, S.-J. Fu, S. Gwo, and K.-J. Lin,^* “Fabrication of porous carbon nanotube network,” Chem. Commun. pp. 5631–5632 (2008).
136. C.-S. Chiu, H.-M. Lee, C.-T. Kuo, and S. Gwo,^* “Immobilization of DNA–Au nanoparticles on aminosilane-functionalized aluminum nitride epitaxial films for surface acoustic wave sensing,” Appl. Phys. Lett. vol. 93, 163106 (2008).
137. Y.-M. Chang,^* Y.-L. Hong, and S. Gwo, “Direct probe of the built-in electric field of Mg-doped a-plane wurtzite InN surfaces with time-resolved electric-field-induced second harmonic generation,” Appl. Phys. Lett. vol. 93, 131106 (2008).
138. C.-L. Wu, H.-M. Lee, C.-T. Kuo, C.-H. Chen, and S. Gwo,^* “Absence of Fermi level pinning at cleaved nonpolar InN surfaces,” Phys. Rev. Lett. vol. 101, 106803 (2008).
139. H.-Y. Chen, Y.-C. Yang, H.-W. Lin, S.-C. Chang, and S. Gwo,^* “Polarized photoluminescence from single GaN nanorods: Effects of optical confinement,” Optics Express vol. 16, pp.13465–13475 (2008).
140. Y.-M. Chang,^* H.-W. Lin, Y.-L. Hong, and S. Gwo, “Ultrafast E₁(LO) phonon and plasmon dynamics in a-plane wurtzite InN,” J. Appl. Phys. Lett. vol. 104, 036105 (2008).
141. B.-Y. Tsui,^* C.-M. Hsieh, P.-C. Su, S.-D. Tzeng, and S. Gwo, “Two-dimensional carrier profiling by Kelvin-probe force Microscopy,” Jpn J. Appl. Phys. vol. 47, pp. 4448–­4453 (2008).
142. S.-Z. Sun, Y.-C. Wen, S.-H. Guol, H.-M. Lee, S. Gwo, and C.-K. Sun,^* “Observation of femtosecond carrier thermalization time in indium nitride,” J. Appl. Phys. vol. 103, 123513 (2008).
143. Y.-S. Lu, C.-L. Ho, J. A. Yeh,^* H.-W. Lin, and S. Gwo, “Anion detection using ultrathin InN ion selective field effect transistors,” Appl. Phys. Lett. vol. 92, 212102 (2008).
144. H.-Y. Chen, H.-W. Lin, C.-Y. Wu, W.-C. Chen, J.-S. Chen, and S. Gwo,^* “Gallium nitride nanorod arrays as low-refractive-index transparent media in the entire visible spectral region,” Optics Express vol. 16, pp. 8106–8116 (2008).
145. W.-C. Yang, C.-W. Wang, J.-H. He, Y.-C. Chang, J.-C. Wang, L.-J. Chen,^* H.-Y. Chen, and S. Gwo, “Facile synthesis of large scale Er-doped ZnO flower-like structures with enhanced 1.54 mm infrared emission,” Phys. Stat. Sol. A vol. 205, pp. 1190–1195 (2008).
146. V. Yu. Davydov,^* A. A. Klochikhin, M. B. Smirnov, Yu. E. Kitaev, A. N. Smirnov, E. Y. Lundina, H. Lu, W. J. Schaff, H.-M. Lee, H.-W. Lin, Y.-L. Hong, S. Gwo, “SIMS and Raman studies of Mg-doped InN,” Phys. Stat. Sol. C vol. 5, pp. 1648–1651 (2008).
147. C.-S. Chiu and S. Gwo,^* “Quantitative surface acoustic wave detection based on gold nanoparticles and their bioconjugates,” Anal. Chem. vol. 80, pp. 3318–3326 (2008).
148. C.-L. Wu, H.-M. Lee, C.-T. Kuo, C.-H. Chen, and S. Gwo,^* “Cross-sectional photoelectron microscopy and spectroscopy of wurtzite InN/GaN heterojunction: Measurement of “intrinsic” band lineup,” Appl. Phys. Lett. vol. 92, 162106 (2008).
149. H. Ahn,^* Y.-P. Ku, C.-H. Chuang, C.-L. Pan, H.-W. Lin, Y.-L. Hong, and S. Gwo, “Intense terahertz emission from a-plane InN surface,” Appl. Phys. Lett. vol. 92, 102103 (2008).
150. C.-F. Chen, S.-D. Tzeng, H.-Y. Chen, K.-J. Lin, and S. Gwo,^* “Tunable plasmonic response from alkanethiolate-stabilized gold nanoparticle superlattices: Evidence of near-field coupling,” J. Am. Chem. Soc. vol. 130, pp. 824–826 (2008).
151. A. A. Klochikhin,^* V. Yu. Davydov, I. Yu. Strashkova, and S. Gwo, “Classical and quantum solutions of the planar accumulation layer problem within the parabolic effective-mass approximation,” Phys. Rev. B vol. 76, 235325 (2007).
152. Y.-S. Lu, C.-C. Huang, J. A. Yeh,^* C.-F. Chen, and S. Gwo, “InN-based anion selective sensors in aqueous solutions,” Appl. Phys. Lett. vol. 91, 202109 (2007).
153. C.-H. Chuang, C.-H. Chen, Y.-M. Chang, C.-W. Peng, S.-S. Wong, S.-D. Tzeng, S. Gwo, Y. Zhu, C.-H. Sow, and M.-T. Lin,^* “Enhanced chemical shift of carbon nanotube from laser assisted gas incorporation,” Appl. Phys. Lett. vol. 91, 183101 (2007).
154. Y.-M. Chang^* and S. Gwo, “Direct measurement of momentum relaxation time in wurtzite InN,” J. Appl. Phys. vol. 102, 083540 (2007).
155. H. Ahn,^* Y.-P. Ku, Y.-C. Wang, C.-H. Chuang, S. Gwo, C.-L. Pan, “Terahertz spectroscopic study of vertically-aligned InN nanorods,” Appl. Phys. Lett. vol. 91, 163105 (2007).
156. H. Ahn,^* Y.-P. Ku, Y.-C. Wang, C.-H. Chuang, S. Gwo, C.-L. Pan, “Terahertz emission from vertically aligned InN nanorod arrays,” Appl. Phys. Lett. vol. 91, 132108 (2007).
157. V. Yu. Davydov,^* A. A. Klochikhin, M. B. Smirnov, A. N. Smirnov, I. N. Goncharuk, D. A. Kurdyukov, H. Lu, W. J. Schaff, H.-M. Lee, H.-W. Lin, S. Gwo, “Experimental and theoretical studies of lattice dynamics of Mg-doped InN, Appl. Phys. Lett. vol. 91, 111917 (2007).
158. C.-L. Wu, H.-M. Lee, C.-T. Kuo, S. Gwo,^* and C.-H. Hsu, “Polarization-induced valence-band alignments at cation- and anion-polar InN/GaN heterojunctions,” Appl. Phys. Lett. vol. 91, 042112 (2007).
159. T.-R. Tsai,^* C.-F. Chang, and S. Gwo, “Ultrafast hot electron relaxation time anomaly in InN epitaxial films,” Appl. Phys. Lett. vol. 90, 252111 (2007).
160. K. T. Tsen,^* J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo, “Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy,” J. Phys.-Condens. Mat. vol. 19, 236219 (2007).
161. C.-J. Wu^* and S. Gwo, “Calculations of optical properties of an annular dielectric mirror,” J. of Electromagn. Waves and Appl. vol. 21, pp. 821–827 (2007).
162. A. A. Klochikhin,^* V. Yu. Davydov, I. Yu. Strashkova, P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, H.-Y. Chen, and S. Gwo, “Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation,” Phys. Stat. Solidi-Rapid Res. Lett. vol. 1, pp. 159–161 (2007).
163. K. T. Tsen,^* J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo, “Subpicosecond time-resolved Raman studies of electron-longitudinal optical phonon interactions in InN,” Appl. Phys. Lett. vol. 90, 172108 (2007).
164. K. T. Tsen,^* J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo, “Direct measurements of the lifetimes of longitudinal optical phonon modes and their dynamics in InN,” Appl. Phys. Lett. vol. 90, 152107 (2007).
165. V. V. Emtsev, V. Yu. Davydov,^* A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov, V. V. Kozlovskii, C.-L. Wu, C.-H. Shen, and S. Gwo, “Effects of proton irradiation on electrical and optical properties of n-InN,” Phys. Stat. Sol. C vol. 4, pp. 2589–2592 (2007).
166. C.-H. Shen, H.-Y. Chen, H.-W. Lin, C.-Y. Wu, C.-H. Chen, S. Gwo,^* A. A. Klochikhin, and V. Yu. Davydov, “Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy,” Phys. Stat. Sol. C vol. 4, pp. 2465–2468 (2007).
167. Y.-S. Lin, S.-H. Koa, C.-Y. Chan, and S. S. H. Hsu,^* H.-M. Lee and S. Gwo, “High current density InN/AlN heterojunction field-effect transistor with a SiN_x gate dielectric layer,” Appl. Phys. Lett. vol. 90, 142111(2007).
168. Y.-M. Chang,^* H. W. Chu, C.-H. Shen, H.-Y. Chen, and S. Gwo, “Determination of the electron effective mass of wurtzite InN by coherent upper-branch A₁(LO) phonon-plasmon coupling mode,” Appl. Phys. Lett. vol. 90, 072111 (2007).
169. Y.-M. Chang,^* H. W. Chu, C.-H. Shen, and S. Gwo, “Identification of surface optical phonon in wurtzite InN epitaxial thin films by coherent phonon spectroscopy,” Appl. Phys. Lett. vol. 90, 072110 (2007).
170. C.-F. Chen, C.-L. Wu, and S. Gwo,^* “Organosilane functionalization of InN surface,” Appl. Phys. Lett. vol. 89, 252109 (2006).
171. H.-Y. Chen, H.-W. Lin, C.-H. Shen, and S. Gwo,^* “Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy,” Appl. Phys. Lett. vol. 89, 243105 (2006).
172. W.-Y. Ko, W.-H. Chen, S.-D. Tzeng, S. Gwo, and K.-J. Lin,^* “Synthesis of pyramidal copper nanoparticles on gold substrate,” Chem. Mater. vol. 18, pp. 6097–6099 (2006).
173. Y.-C. Wen, C.-Y. Chen, C.-H. Shen, S. Gwo, and C.-K. Sun,^* “Ultrafast carrier thermalization in InN,” Appl. Phys. Lett. vol. 89, 232114 (2006).
174. H.-Y. Chen, C.-H. Shen, H.-W. Lin, C.-H. Chen, C.-Y. Wu, S. Gwo,^* V. Yu. Davydov, and A. A. Klochikhin, “Growth and optical properties of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy,” Thin Solid Films vol. 515, 961–966 (2006).
175. W. Y. Tong, A. B. Djurišić,^* M. H. Xie, A. C. M. Ng, K. Y. Cheung, W. K. Chan, Y. H. Leung, H. W. Lin, and S. Gwo, “Metal phthalocyanine nanoribbons and nanowires,” J. Phys. Chem. B vol. 110, pp. 17406–17413 (2006).
176. C.-F. Chen, S.-D. Tzeng, M.-H. Lin, and S. Gwo,^* “Electrostatic assembly of gold colloidal nanoparticles on organosilane monolayers patterned by microcontact electrochemical conversion,” Langmuir vol. 22, pp. 7819–7824 (2006).
177. S.-D. Tzeng and S. Gwo,^* “Charge trapping properties at Si₃N₄/SiO₂ interface studied by variable-temperature electrostatic force microscopy,” J. Appl. Phys. vol. 100, 023711 (2006).
178. C.-H. Shen, H.-Y. Chen, H.-W. Lin, S. Gwo,^* A. A. Klochikhin, and V. Yu. Davydov, “Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer,” Appl. Phys. Lett. vol. 88, 253104 (2006).
179. X. M. Cai, Y. H. Leung, K. Y. Cheung, K. H. Tam, A. B. Djurišić,^* M. H. Xie, H. Y. Chen, and S. Gwo, “Straight and helical InGaN core-shell nanowires with a high In core content,” Nanotechnology vol. 17, pp. 2330–2333 (2006).
180. S.-D. Tzeng, K.-J. Lin, J.-C. Hu, L.-J. Chen, and S. Gwo,^* “Templated self-assembly of colloidal nanoparticles controlled by electrostatic nanopatterning on Si₃N₄/SiO₂/Si electret,” Adv. Mater. vol. 18, pp. 1147–1151 (2006).
181. A. B. Djurišić,^* Y. H. Leung , K. H. Tam , L. Ding , W. K. Ge , H. Y. Chen , and S. Gwo, “Green, yellow, and orange defect emission from ZnO nanostructures: influence of excitation wavelength,” Appl. Phys. Lett. vol. 88, 103107 (2006). [Cover of the 6 March 2006 issue]
182. C.-L. Wu, C.-H. Shen, H.-Y. Chen, S.-J. Tsai, H.-W. Lin, H.-M. Lee, and S. Gwo,^* T.-F. Chuang, H.-S. Chang, and T. M. Hsu, “The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy,” J. of Cryst. Growth vol. 288, pp. 247–253 (2006).
183. A. B. Djurišić,^* W. M. Kwok, W. K. Chan, D. L. Phillips, H. Y. Chen, C. L. Wu, and S. Gwo, “Optical properties of highly faceted ZnO rods,” J. Appl. Phys. vol. 99, 033517 (2006).
184. C.-L. Wu, C.-H. Shen, and S. Gwo,^* “Valence band offset of wurtzite InN/AlN commensurate heterojunction determined by photoelectron spectroscopy,” Appl. Phys. Lett. vol. 88, 032105 (2006).
185. A. B. Djurišić,^* W. M. Kwok, Y. H. Leung, W. K. Chan, D. L. Phillips, M. S. Lin, and S. Gwo, “Ultrafast spectroscopy of stimulated emission in single ZnO tetrapod nanowires, Nanotechnology vol. 17, pp. 244–249 (2006).
186. C.-H. Shen, H.-W. Lin, H.-M. Lee, C.-L. Wu, J.-T. Hsu, and S. Gwo,^* “Self-assembled InN quantum dots grown on AlN/Si and GaN/Al₂O₃ surfaces by plasma-assisted molecular-beam epitaxy under Stranski-Krastanow mode,” Thin Solid Films vol. 494, 79–83 (2006).
187. H. Ahn,^* C.-H. Shen, C. -L. Wu, and S. Gwo, “Carrier concentration dependent optical properties of wurtzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry,” Thin Solid Films vol. 494, pp. 69–73 (2006).
188. C.-L. Wu, C.-H. Shen, H.-W. Lin, H.-M. Lee, and S. Gwo,^* “Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c-plane,” Appl. Phys. Lett. vol. 87, 241916 (2005).
189. X. M. Cai, A. B. Djurišić, M. H. Xie,^* C. S. Chiu, and S. Gwo, “Growth mechanism of stacked-cone and smooth-surface GaN nanowires,” Appl. Phys. Lett. vol. 87, 183103 (2005). [Cover of the 31 October 2005 issue]
190. S. Y. Chen, L. J. Chen,^* S. D Tzeng, and S. Gwo, “Epitaxial growth of NiSi₂ on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si₃N₄ layer,” J. Vac. Sci. Technol. B vol. 23, pp. 1905–1908 (2005).
191. W. M. Kwok, A. B. Djurišić,^* Y. H. Leung, W. K. Chan, D. L. Phillips, H. Y. Chen, C. L. Wu, S. Gwo, M. H. Xie, “Study of excitonic emission in highly faceted ZnO rods,” Chem. Phys. Lett. vol. 412, pp. 141–144 (2005).
192. H. Ahn,^* C.-H. Shen, C.-L. Wu, and S. Gwo, “Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varying carrier concentrations,” Appl. Phys. Lett. vol. 86, 201905 (2005).
193. C.-F. Chen, S.-D Tzeng, H.-Y. Chen, and S. Gwo,^* “Silicon microlens structures fabricated by scanning-probe gray-scale oxidation,” Optics Lett. vol. 30, pp. 652–654 (2005). Feature story appeared in Laser Focus World (May issue, pp. 15–17, 2005).
194. F. S.-S. Chien, W.-F. Hsieh, S. Gwo, J. Jun, R. M. Silver, A. E. Vladár, and J. A. Dagata,^* “Characterization of prototype silicon pitch artifacts fabricated by scanning probe lithography and anisotropic wet etching,” J. Vac. Sci. Technol. B vol. 23, pp. 66–71 (2005).
195. C.-L. Wu, L-J. Chou, and S. Gwo,^* “Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy,” Appl. Phys. Lett. vol. 85, pp. 2071–2073 (2004).
196. T. Yasuda,^* T. Tada, S. Yamasaki, S. Gwo, and. L.-S. Hong, “Position-specific formation of epitaxial Si grains on thermally oxidized Si(001) surfaces via isolated nanodots,” Chem. Mater. vol. 16, pp. 3518–3523 (2004).
197. S. Gwo,^* C.-L. Wu, C.-H. Shen, W.-H. Chang, T. M. Hsu, J.-S. Wang, and J.-T. Hsu, “Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature,” Appl. Phys. Lett. vol. 84, pp. 3765–3767 (2004).
198. C.-L. Wu, J.-C. Wang, M.-H. Chan, T. T. Chen, and S. Gwo,^* “Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/b-Si₃N₄(0001) double-buffer structure,” Appl. Phys. Lett. vol. 83, pp. 4530–4532 (2003).
199. C.-S. Chen, J.-T. Lue,^* C.-L. Wu, S. Gwo, and K.-Y. Lo, “A study of surface and interlayer structures of epitaxially growth group-III nitride compound films on Si(111) substrates by second-harmonic generation,” J. Phys.-Condens. Mat. vol. 15, pp. 6537–6548 (2003).
200. S. Gwo,^* C.-P. Chou, C.-L. Wu, Y.-J. Yeh, S.-J. Tsai, W.-C. Lin, and M.-T. Lin, “Self-limiting size distribution of supported cobalt nanoclusters at room temperature,” Phys. Rev. Lett. vol. 90, 185506 (2003).
201. T. M. Hong,^* C.-H. Wu, S. D. Tzeng, and S. Gwo, “Utilizing the Coulomb force on a carbon nanotube to enhance the resolution of electrostatic force microscope,” International Journal of Nanoscience vol. 2, pp. 219–224 (2003).
202. S.-D. Tzeng, C.-L. Wu, Y.-C. You, T. T. Chen, S. Gwo,^* and H. Tokumoto, “Charge imaging and manipulation using carbon nanotube probes,” Appl. Phys. Lett. vol. 81, pp. 5042–5044 (2002).
203. L. J. Chou,^* M. L. Huang, J. Y. Hsieh, Y. L. Chueh, S. Gwo, C. C. Hsueh, S. Pan, “Interfacial structures of Si₃N₄ on Si(100) & Si(111),” International Journal of Modern Physics B vol. 16, pp. 4493–4496 (2002).
204. F. S.-S. Chien, W. F. Hsieh, S. Gwo, A. E. Vladár, and J. A. Dagata,^* “Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching,” J. Appl. Phys. vol. 91, pp. 10044–10050 (2002).
205. R. Klauser,^* I.-H. Hong, T.-H. Lee, G.-C. Yin, D.-H. Wei, K.-L. Tsang, T. J. Chuang, S.-C. Wang, S. Gwo, M. Zharnikov, and J.-D. Liao, “Zone-plate-based scanning photoelectron microscopy at SRRC: performance and applications,” Surface Review and Letters vol. 9, pp. 213–222 (2002).
206. C.-L. Wu, J.-L. Hsieh, H.-D. Hsueh, and S. Gwo,^* “Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopy,” Phys. Rev. B vol. 65, 045309 (2002).
207. S. Gwo,^* T. T. Chen, T. Yasuda, and S. Yamasaki, “Nanometer-scale conversion of Si₃N₄ to SiO_x for applications in lithography, micromachining, and selective-area CVD,” Phys. Stat. Sol. A vol. 188, pp. 383–387 (2001).
208. R. Klauser,^* I.-H. Hong, H.-J. Su, T. T. Chen, S. Gwo, S.-C. Wang, T. J. Chuang, and V. A. Gritsenko, “The oxidation states in scanning-probe-induced Si₃N₄ to SiO_x conversion studied by scanning photoemission microscopy,” Appl. Phys. Lett. vol. 79, pp. 3143–3145 (2001).
209. S. Gwo,^* S.-Y. Huang, and T.-R. Yang, “Enhancement of direct optical transition in nano-crystallized GaAsN alloy,” Phys. Rev. B vol. 64, 113312 (2001).
210. (Review Article) S. Gwo,^* “Scanning probe oxidation of silicon nitride masks for nanoscale lithography, micromachining, and selective epitaxial growth on silicon,” Journal of Physics and Chemistry of Solids vol. 62, pp. 1673–1687 (2001).
211. M. Berg, C. DeWitt-Morette,^* S. Gwo, E. Kramer, “The pin groups in physics: C, P, and T,” Reviews in Mathematical Physics vol. 13, pp. 953–1034 (2001).
212. S. Gwo,^* T. Yasuda, and S. Yamasaki, “Selective-area chemical vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation,” J. Vac. Sci. Technol. A vol. 19, pp. 1806–1811 (2001).
213. (Invited Paper) S. Gwo,^* F. S.-S. Chien, C.-L. Wu, T. Yasuda, and S. Yamasaki, “Scanning probe microscopy and lithography of ultrathin Si₃N₄ films grown on Si(111) and Si(001),” Jpn. J. Appl. Phys. Part 1 vol. 40, pp. 4368–4372 (2001).
214. H. Ahn, C.-L. Wu, S. Gwo, C. M. Wei, and Y. C. Chou,^* “Structure determination of the Si₃N₄/Si(111)-(8´8) surface: a combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations,” Phys. Rev. Lett. vol. 86, pp. 2818–2821 (2001).
215. F. S.-S. Chien, Y. C. Chou, T. T. Chen, W.-F. Hsieh, T.-S. Chao, and S. Gwo,^* “Nano-oxidation of silicon nitride films with an atomic force microscope: chemical mapping, kinetics, and applications,” J. Appl. Phys. vol. 89, pp. 2465–2472 (2001).
216. T. Yasuda,^* S. Yamasaki, and S. Gwo, “Selective-area chemical vapor deposition of Si using proximal-probe-patterned Si₃N₄ growth mask,” Appl. Phys. Lett. vol. 77, pp. 3917–3919 (2000).
217. F. S.-S. Chien, J.-W. Chang, S.-W. Lin, Y.-C. Chou, T. T. Chen, S. Gwo,^* T.-S. Chao, and W.-F. Hsieh, “Nanometer-scale conversion of Si₃N₄ to SiO_x,” Appl. Phys. Lett. vol. 76, pp. 360–362 (2000).
218. F. S.-S. Chien, C.-L. Wu, Y.-C. Chou, T. T. Chen, S. Gwo,^* and W.-F. Hsieh, “Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching,” Appl. Phys. Lett. vol. 75, pp. 2429–2431 (1999).
219. Y. H. Wu, W. J. Chen, S. L. Chang, A. Chin,^* S. Gwo, and C. Tsai, “Improved electrical characteristics of CoSi₂ using HF-vapor treatment,” IEEE Electron Device Letters, vol. 20, pp. 200–202 (1999).
220. S. Gwo,^* C.-L. Yeh, P.-F. Chen, Y.-C. Chou, T. T. Chen, T.-S. Chao, S.-F. Hu, and T.-Y. Huang, “Local electric-field-induced oxidation of titanium nitride films,” Appl. Phys. Lett. vol. 74, pp. 1090–1092 (1999).
221. S. Gwo,^* H. Tokumoto, S. Miwa, “Atomic-scale nature of the (3´3)-ordered GaAs(001):N surface prepared by plasma-enhanced molecular-beam epitaxy,” Appl. Phys. Lett. vol. 71, pp. 362–364 (1997).
222. H. Ohno,^* L. A. Nagahara, S. Gwo, W. Mizutani, H. Tokumoto, “Nanostructural formation of self-assembled monolayer films on cleaved AlGaAs/GaAs heterojunctions,” Mol. Cryst. Liquid Cryst. vol. 295, pp. 189–192 (1997).
223. H. Ohno,^* L. A. Nagahara, S. Gwo, W. Mizutani, H. Tokumoto, “Formation of self-assembled monolayer on cleaved compound semiconductor surfaces and its nano-structure on AlGaAs/GaAs heterostructure,” Journal of the Surface Society of Japan vol. 18, no. 6, pp. 373–379 (1997).
224. S. Gwo,^* H. Ohno, and H. Tokumoto, “Atomic-scale surface structure and ultrasmooth morphology of molecular-beam epitaxy grown AlAs(001)-(3´2),” Phys. Rev. B (Rapid Communication) vol. 55, pp. R1962–R1965 (1997).
225. T. Komeda,^* S. Gwo, and H. Tokumoto, “Cross-sectional scanning tunneling microscopy on cleaved Si(111)-observation of novel reconstruction and structural and electrical properties of MOS interface,” Jpn. J. Appl. Phys. Part 1 vol. 35, pp. 3724–3729 (1996).
226. S. Gwo,^* H. Ohno, S. Miwa, J. F. Fan, and H. Tokumoto, “Structural and doping properties of molecular-beam epitaxy grown Si-doped GaAs(001) surfaces,” Surf. Sci. vol. 358, pp. 446–450 (1996).
227. T. Komeda,^* S. Gwo, and H. Tokumoto, “MOS interface characterization by cross-sectional STM,” Surf. Sci. vol. 358, pp. 38–41 (1996).
228. H. Ohno,^* L. A. Nagahara, S. Gwo, and H. Tokumoto, “Nanometer-Scale Wires of monolayer height alkanethiols on AlGaAs/GaAs heterostructures by selective chemisorption,” Jpn. J. Appl. Phys. Part 2 vol. 35, pp. L512–L515 (1996).
229. (Invited Review Article) S. Gwo,^* and H. Tokumoto, “Cross-sectional scanning tunneling microscopy and spectroscopy of semiconductor heterostructures,” Journal of the Vacuum Society of Japan vol. 38, pp. 1009–1019 (1995).
230. S. Gwo,^* S. Miwa, H. Ohno, J. F. Fan, H. Tokumoto, “Direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped GaAs:Si,” Appl. Phys. Lett. vol. 67, pp. 3123–3125 (1995).
231. S. Gwo,^* H. Ohno, S. Miwa, J. F. Fan, and H. Tokumoto, “Atomic-scale studies of point defects in compound semiconductors by scanning tunneling microscopy,” Material Sciences Forum (Trans Tech Publications, Switzerland), vol. 196-201, pp. 1949–1954 (1995).
232. A. R. Smith, S. Gwo, and C. K. Shih,^* “A new high-resolution two-dimensional micropositioning device for scanning probe microscopy applications,” Rev. Sci. Instrum. vol. 65, pp. 3216–3219 (1994).
233. A. R. Smith, S. Gwo, K. Sadra, T. C. Shih, B. G. Streetman, and C. K. Shih,^* “Comparative study of cross-sectional scanning tunneling microscopy/spectroscopy on III-V hetero- and homostructures: ultrahigh vacuum-cleaved versus sulfide passivated,” J. Vac. Sci. and Technol. B vol. 12, pp. 2610–2615 (1994).
234. S. Gwo, A. R. Smith, K.J. Chao, C. K. Shih,^* K. Sadra, and B. G. Streetman, “Cross-sectional scanning tunneling microscopy and spectroscopy of passivated III-V heterostructures,” J. Vac. Sci. and Technol. A vol. 12, pp. 2005–2008 (1994).
235. S. Gwo, K. J. Chao, C. K. Shih,^* “Cross-sectional scanning tunneling microscopy of doped and undoped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. vol. 64, pp. 493–495 (1994).
236. S. Gwo, K. J. Chao, C. K. Shih,^* K. Sadra, and B. G. Streetman, “Direct mapping of electronic structure across Al_0.3Ga_0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures,” Phys. Rev. Lett. vol. 71, pp. 1883–1886 (1993).
237. S. Gwo, K. J. Chao, A. R. Smith, C. K. Shih,^* K. Sadra, and B. G. Streetman, “Scanning tunneling microscopy of doping and compositional III-V homo- and heterostructures,” J. Vac. Sci. and Technol. B vol. 11, pp. 1509–1513 (1993).
238. S. Gwo, A. R. Smith, and C. K. Shih,^* “Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy,” J. Vac. Sci. Technol. A vol. 11, pp. 1644–1648 (1993).
239. S. Gwo and C. K. Shih,^* “Site-selective imaging in scanning tunneling microscopy of graphite: The nature of site asymmetry,” Phys. Rev. B (Rapid Communication) vol. 47, pp. 13059–13062 (1993).
240. S. Gwo, A. R. Smith, C. K. Shih,^* K. Sadra, B. G. Streetman, “Scanning tunneling microscopy of GaAs multiple pn-junctions,” Appl. Phys. Lett. vol. 61, pp. 1104–1106 (1992).

Books:

• III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions, Editors: S. Gwo, J. W. Ager III, Fan Ren, Oliver Ambacher, and Leo Schowalter, Material Research Society Symposium Proceedings (2009 MRS Fall Meeting) Volume 1202, Material Research Society, Warrendale, Pennsylvania (2010).
• Plasmonic Materials and Metastructures: Fundamentals, Current Status, and Perspectives, Editors: S. Gwo, A. Alù, X. Li, and C.-K. Shih, Elsevier, Amsterdam, Netherlands (2023).

Book Chapters:

• C.-W. Cheng and S. Gwo,^* “Fundamentals of plasmonic materials,” Chap. 1 in Plasmonic Materials and Metastructures: Fundamentals, Current Status, and Perspectives, pp. 3–33, Editors: S. Gwo, A. Alù, X. Li, and C.-K. Shih, Elsevier, Amsterdam, Netherlands (2023).
• C.-W. Cheng, S. S. Raja, L. T. Quynh, C.-K. Shih, and S. Gwo,^* “Sustainable and CMOS compatible plasmonic,” Chap. 4 in Plasmonic Materials and Metastructures: Fundamentals, Current Status, and Perspectives, pp. 103–137, Editors: S. Gwo, A. Alù, X. Li, and C.-K. Shih, Elsevier, Amsterdam, Netherlands (2023).
• C.-W. Chang, R. Mishra, H. Ahn, H. W. H. Lee, and S. Gwo,^* “Refractory plasmonic meterials,” Chap. 5 in Plasmonic Materials and Metastructures: Fundamentals, Current Status, and Perspectives, pp. 139–161, Editors: S. Gwo, A. Alù, X. Li, and C.-K. Shih, Elsevier, Amsterdam, Netherlands (2023).
• S. Gwo,^* Y.-J. Lu, H.-W. Lin, C.-T. Kuo, C.-L. Wu, M.-Y. Lu, and L.-J. Chen, “Nitride semiconductor nanorod heterostructures for full-color and white-light applications,” Chap. 10 in III-Nitride Semiconductor Optoelectronics, Semiconductors and Semimetals Series, vol. 96, pp. 341–384, Editor: Z. Mi and C. Jagadish, Elsevier, Amsterdam, Netherlands (2017).
• Y.-H. Chang, Y.-S. Lu, J. A. Yeh^* Y.-L. Hong, H.-M. Lee, and S. Gwo,^* “InN-based chemical sensors,” Chap. 4 in Semiconductor Device-Based Sensors for Gas, Chemical, and Bio Applications, pp. 131–147, Editors: F. Ren and S. J. Pearton, CRC Press, Boca Raton, Florida (2011).

B. Other Publications：

1. 果尚志，「正方晶型III族氮化合物半導體及其混晶的研究概況」，光訊第66期，10-12頁(1997年6月)。
2. 吳忠霖、簡世森、果尚志，「以原子力顯微鏡製作奈米結構」，物理雙月刊第21卷第4期，429-436頁(1999年8月)。
3. 果尚志，「矽之奈米級蝕刻」，自然科學簡訊第12卷第1期，20-23頁(2000年2月)。
4. 簡世森、果尚志，「原子力顯微鏡微影技術與應用」，科儀新知第21卷第5期，44-55頁(2000年4月)。
5. 果尚志，「美國真空協會國際研討會出席會議記錄」，科學發展月刊第29卷第2期，136-139頁(2001年2月)。
6. 曾賢德、果尚志，「掃描探針量測設備及半導體奈米級加工」，電子月刊第68期，130-144頁(2001年3月)。
7. 果尚志，「掃描探針微影術在奈米科技上之應用」，工業材料第173期，111-125頁(2001年5月)。
8. 果尚志、吳忠霖，「掃描探針技術之新發展」，量測資訊第80期，27-31頁(2001年7月)。
9. 果尚志，「掃描探針顯微儀-奈米世界的全方位工具」，自然科學簡訊第13卷第4期，136-138頁(2001年11月)。
10. 果尚志，「奈米世界的全方位性工具」，物理雙月刊第23卷第6期，633-639頁(2001年12月)。

C. Patents:

1. "Method of oxidizing a nitride film on a conductive substrate," S. Gwo et al., US patent no.: 6,274,513
2. "Method for manufacturing organic monomolecular film," H. Ohno et al., US patent no.: 5,942,286
3. 3 Japan patents (Japanese patent nos.: 9-108565, 9-237926, 9-192540), 1 Japan patent pending
4. 1 Taiwan patent (Taiwan patent no. 134,974), 2 Taiwan patents pending