Professor Kwo, Raynien

Professor

Kwo, J. Raynien

Personal Website

Office：886-3-5742800(PHYS R225)

Laboratory：Advanced Thin Film Low Temperature Measurement Lab／

Novel Materials Core Facility Oxide Epitaxy Lab

Lab Tel： 03-571-5131-x 62446, and x 33225

(room 205, 206, 209)

Fax：886-3-5723052

E-mail：raynien@phys.nthu.edu.tw

	Education
1977-1981, Ph.D. Applied Physics, Stanford University, U.S.A. 1975-1977, M.S. Applied Physics, Stanford University, U.S.A. 1971-1975, B.S. Physics, National Taiwan University, R.O.C.
	Professional Experience
Current position： Vice President of International Union of Physics and Applied Physics, and C10 Chair (2015-2017) Board member of National Research Labs, (2015-2017) Distinguished Chair Professor, National Tsing Hua University, Hsinchu, Taiwan (8/2008-now) Professor, Department of Physics, National Tsing Hua University, Hsinchu, Taiwan (6/2003-now) 　　Experience： Vice President for Research and Development, National Tsing Hua University, Hsinchu, Taiwan(2016/8-2017/3) Director, Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan (1/2010–7/2012) Director, Center for Fundamental Science Research, National Tsing Hua University, Hsinchu, Taiwan (8/2008–12/2009) Director, The Physical Society of the Republic of China (Taiwan), (1/2008–12/2009) Director, Department of Physics, National Tsing Hua University, Hsinchu, Taiwan (8/2005–8/2008) Natural Science Chair Professorship, National Tsing Hua University, Hsinchu, Taiwan (8/2004–7/2008) Senior Advisor, Electronics and Optoelectronics Research Institute, Industrial Technology Research Institute, (4/2003–4/2005) Distinguished Member of Technical Staff, Electronic Research Laboratory, Agere Systems, New Jersey, (7/2000–5/2003) Member of Technical Staff, Physical Research Division, Bell Laboratories, Murray Hill, New Jersey, (6/1981–6/2000)
	Honors and Awards
The 20th National Chair Professor, Ministry of Education (12/2016). Taiwan, 8th Outstanding Woman Scientist Award (3/2015). Elected among Top 100 Women Worldwide with profiles in a book entitled as “Inspirational Profiles of Successful Women: Ceramic and Glass Scientists and Engineers”, publisher by John Wiley & Sons, Inc. (2015). Outstanding Alumni of National Taiwan University, Department of Physics, (12/2014–now). Fellow, American Physical Society, Division of Materials Physics. The citation reads: “For her outstanding work in developing novel electronic materials using innovative fabrication techniques, especially her pioneering work that laid the foundation for the field of artificial magnetic superlattices.” (11/2009–now). National Tsing Hua University, Distinguished Chair Professor, (8/2008–now). National Taiwan University, Chair Professor, (1/2010–7/2012). National Taiwan University, Distinguished Professor, (1/2010–7/2012). Fellow, Republic of China Physical Society (1/2005–now). National Tsing Hua University Natural Science Chair Professor, (8/2004–7/2008). Outstanding Scholar Chair of the Outstanding Scholar Foundation (2/2004–2/2009). National Tsing Hua University, TSMC Chair Professor (8/2003–1/2004). 2001 Distinguished Member of Technical Staff (DMTS) Award for seminal research achievements by Research, Agere Systems, formerly Bell Laboratories. The citation reads: “In recognition of her outstanding technical contributions and for her consistent performance, thought leadership, and positive impact to the business.” 746 th among the ISI's 1120 Most Cited Physicists (1981–1997) ranked by total citations in physics, astrophysics, materials science, chemical physics, and the related fields. (http://pcb4122.univ-lemans.fr/1120physiciens.html). CEEE Outstanding Paper Award, Center of Electronics and Electrical Engineering, National Institute of Standards and Technology, 1989.
	Research Fields
Materials physics of thin films by advanced molecular beam epitaxy Spintronics Gate dielectrics for Si and III-V semiconductors High temperature superconducting films Magnetic superlattices and heterostructures
	Research Interests and achievement
Updated on October 6, 2016 　　My research has primarily been exploring the frontier of physics in novel materials by advanced thin film preparation techniques. During my tenure in Bell Lab Physical Research over a span of 22 years, the earlier representative work was magnetic superlattices by the invention of metal molecular beam epitaxy in 1981-86. The pioneer work on synthetic rare earth magnetic superlattices demonstrated for the first time the modulation effect of magnetic properties by artificial layering, and invented the notion of "magnetronics”. 　　During 1987-92, high temperature superconducting perovskite oxide films was the main focus by inventing oxide molecular beam epitaxy, and this has led to studies of anisotropic superconducting properties in layered cooperates, and understanding of the fundamental HTSC mechanism. 　　Since 1993, my interest has shifted toward high dielectric constant (κ) oxides for nano electronic and photonic applications. Two new transparent conducting oxides were discovered for modern display and electro-optical devices. During last decade major efforts were devoted to high κ dielectric film synthesis for DRAMs, wireless communication, and recently gate oxide applications. The discovery of a mixed oxide for compound semiconductors passivation demonstrated for the first time the long sought GaAs-based MOSFETs, now considered as a viable technology replacing Si CMOS in near future. Another program being developed is the spintronics research to study dilutely doped magnetic oxides based on high κ dielectrics, spin polarization analysis by Andreev Reflection, and spin injection and dynamics in Datta-Das Spin FET made of half metals and compound semiconductors. In novel spintronics research, I have expanded my research towards a new class of quantum matters, topological insulators (TIs), based on their exotic properties and the future applications in low-dissipation electronic devices and quantum computing. We investigate the ferromagnetic insulator/TI and ferromagnetic metal/TI magnetic heterostructures harnessing the helical spin texture of topological surface states of strong 3D-TIs by spin pumping and spin torque FMR techniques. Electrical field effect in a high k gate device is implemented to enable direct manipulations of helical spin textures of the TI surface states in both Dirac cones for realization of all-electric spintronics.

Major Publications

A. Refereed Papers:

1. "Nb₃Al Thin-Film Synthesis by Electron-Beam Coevaporation", J. Kwo, R. H. Hammond, and T. H. Geballe, J. Appl. Phys., 51, 172, (1980).
2. "Superconducting Tunneling into Al5 Nb₃Al Thin Films", J. Kwo and T. H. Geballe, Phys. Rev. B23, 3230 (1981).
3. "Microscopic Parameters of Al5 Nb₃ Al, How Important is the Band Density of States?", J. Kwo, T. P. Orlando and M. R. Beasley, Phys. Rev. B24, 2506 (1981).
4. "Stabilization and Strong Coupling Properties of High Transition Temperature Superconductors", T. H. Geballe, R. H. Hammond and J. Kwo, in "Synthesis and Properties of Metastable Phases”, ed. E. S. Machlin and T. J. Rowland, p. 67, (1981).
5. "CW Laser Annealing of Nb3Al and Nb₃Si", T. Shibata, J. F. Gibbons, J. Kwo, R. D. Feldman and T. H. Geballe, J. Appl. Phys. 52, 1537 (1981).
6. "The Role of Disorder in Maximizing the Upper Critical Fields in the Nb-Sn System", T. P. Orlando, J. A. Alexander, S. J. Bending, J. Kwo, S. J. Poon, R. H. Hammond, M. R. Beasley, E. J. McNiff, Jr., and S. Foner, IEEE Trans. Mag. MAG-17, 368 (1981).
7. "Tunneling into the Al5 Compounds", J. Kwo and T. H. Geballe, Physica 109 & 110B, 1665 (1982).
8. "XPS Study of Surface Oxidation of Nb/Al Overlayer Structures", J. Kwo, G. K. Wertheim, M. Gurvitch and D. N. E. Buchanan, Appl. Phys. Lett. 40, 675 (1982).
9. "XPS and Tunneling Study of Air-Oxidized Overlayer Structures of Nb with Thin Mg, Y and Er", J. Kwo, G. K. Wertheim, M. Gurvitch and D. N. E. Buchanan, IEEE Trans. Mag. MAG-19, 791 (1983).
10. "Tunneling and Surface Properties of Oxidized Thin Metal Overlayers on Nb", M. Gurvitch and J. Kwo, Advances in Cryogenic Engineering, 30, 509 (1984).
11. "XPS Study of Bonding in Ligated Au Clusters", G. K. Wertheim, J. Kwo, B. K. Teo, and K. A. Keating, Sol. State Commun., 55, 357 (1985).
12. "Structural Properties of Single Crystal Rare-Earth Thin Films Y and Gd Grown by Molecular Beam Epitaxy", J. Kwo, D. B. McWhan, M. Hong, E. M. Gyorgy, L. C. Feldmann, and J. E. Cunningham, in"Layered Structures, Epitaxy and Interfaces”, Materials Research Society, eds. Gibson, and Dawson, 37, 509 (1985).
13. "Properties of Rare-Earth Metal Superlattices Grown by Molecular Beam Epitaxy", J. Kwo, E. M. Gyorgy, M. Hong, W. P. Lowe, D. B. McWhan and R. Superfine, J. Appl. Phys. 57, 3672 (1985).
14. "Magnetic and Structural Properties of Single Crystal Rare-Earth Gd/Y Superlattices", J. Kwo, E. M. Gyorgy, D. B. McWhan, M. Hong, F. J. Di Salvo, C. Vettier and J. E. Bower, Phys. Rev. Lett. 55, 1402 (1985).
15. "Magnetic Properties of Single Crystal Rare Earth Gd-Y Superlattices", J. Kwo, E. M. Gyorgy, F. J. Di Salvo, M. Hong, Y. Yafet and D. B. McWhan, J. Magnetism and Magnetic Materials, 54-57, 771, (1986).
16. "Magnetic X-ray Scattering Study of Interfacial Magnetism in a Gd-Y Superlattice", C. Vettier, D. B. McMhan, E. M. Gyorgy, J. Kwo, B. M. Buntschuh and B. W. Batterman, Phys. Rev. Lett. 56, 757, (1986).
17. "Magnetic X-ray Scattering From Superlattices", D. B. McWhan, C. Vettier, E. M. Gyorgy, J. Kwo, B. Buntschuh and B. Batterman, J. Magnetism and Magnetic Materials, 54-57, 7751, (1986).
18. "Structural and Magnetic Properties of Single Crystal Rare-Earth Gd/Y Superlattices", J. Kwo, D. B. McWhan, F. J. Di Salvo, E. M. Gyorgy, and M. Hong, in "Layered Structures and Epitaxy”, Materials Research Society, eds. Gibson, Osbourn, and Tromp, 56, 211, (1986).
19. "Growth of Rare Earth Single Crystals by MBE: An Epitaxial Relationship Between hcp Rare Earth and bcc Nb", J. Kwo, M. Hong and D. B. McWhan, Appl. Phys. Lett. 49, 319, (1986).
20. "Dipole-Dipole Interactions and 2-dimensional Ferromagnetism", Y. Yafet, J. Kwo and E. M. Gyorgy, Phys. Rev., Brief Report, 33, 6519, (1986).
21. "Observation of a Magnetic Antiphase Domain Structure with Long-Range Order in a Synthetic Gd-Y Superlattice", C. F. Majkrzak, J. W. Cable, J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, J. V. Waszczak, and C. Vettier, Phys. Rev. Lett. 56, 2700, (1986).
22. "Synthesis of Rare Earth Films and Superlattices" J. Kwo, in "Thin Film Techniques for Low Dimensional Structures", Edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, N. H. Neave and A. S. Arrott, NATO ASI Series B, Physics 13, p. 337, Plenum Publisher Corporation (1987).
23. "Polarized Neutron Diffraction Studies of Gd-Y Synthetic Superlattices", C. F. Majkrzak, J. W. Cable, J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, J. V. Waszczak, H. Grimm, and C. Vettier, J. Appl. Phys. 61, 4055, (1987).
24. "Synthetic Magnetic Rare-Earth Dy-Y Superlattices", M. Hong, R. M. Fleming, J. Kwo, L. F. Schneemeyer, J. V. Waszczak, J. P. Mannaerts, C. F. Majkrzak, D. Gibbs, and J. Bohr, J. Appl. Phys. 61, 4052, (1987).
25. "Modulated Magnetic Properties in Synthetic Rare Earth Gd-Y Superlattices", J. Kwo, M. Hong, F. J. Di Salvo, J. V. Waszczak, C. F. Majkrzak, Phys. Rev. B. Rapid Comm. 35, 7925, (1987).
26. "Antiphase Domain Boundaries in the Superconducting Phase of Y-Ba-Cu-O System", C. H. Chen, D. J. Werder, S. H. Liou, J. Kwo, and M. Hong, Phys. Rev. B35, 8767, (1987).
27. "Break-Junction Tunneling Measurements of the High T_c Superconductor YBa₂Cu₃O_9-δ ”, J. Moreland, J. W. Ekin, L. F. Goodrich, T. E. Capobianco, A. F. Clark, J. Kwo, M. Hong, and S. H. Liou, Phys. Rev. B35, 8856 (1987).
28. "Transport Critical-Current Characteristics of YBa₂Cu₃O_7-x ”, J. W. Ekin, A. J. Panson, A. I. Braginski, M. A. Janocko, M. Hong, J. Kwo, S. H. Liou, D. W. Capone, II, and B. Flandermeyer, in "High Temperature Superconductors”, Materials Research Society , Eds. D. V. Gubser and M. Schluter, EA-11, p. 223, (1987).
29. "Superconducting Y-Ba-Cu-O Oxide Films by Sputtering", M. Hong, S. H. Liou, J. Kwo, and B. A. Davidson, Appl. Phys. Lett. 51, 694 (1987).
30. "Single Crystal Superconducting YBa₂Cu₃O_7-x Oxide Films by Molecular Bean Epitaxy", J. Kwo, M. Hong, R. M. Fleming, T. C. Hsieh, S. Liou, and B. A. Davidson, Conf. Proc. of International Workshop on "Novel Mechanism of Superconductivity", Plenum Press, New York, 1987, p. 699.
31. "Structural and Superconducting Properties of Orientation-ordered YBa₂Cu₃O_7-x Films Prepared by Molecular Beam Epitaxy", J. Kwo, T. C. Hsieh, R. M. Fleming, M. Hong, S. H. Liou, B. A. Davidson, L. C. Feldman, Phys. Rev. B56, 4039 (1987).
32. "Evidence for Weak Link and Anisotropy Limitations on the Transport Critical Current in Bulk Polycrystalline YBa₂Cu₃O_7-x , J. W. Ekin, A. I. Braginski, A. J. Panson, M. A. Janocko, D. W. Capone II, N. J. Zaluzec, B. Flandermeyer, O. F. de Lima, M. Hong, J. Kwo and S. H. Liou, J. Appl. Phys.62, 4821 (1987).
33. "Raman Detection of Superconducting Gap in Ba-Y-Cu-O Superconductor", K. B. Lyons, S. H. Liou, M. Hong, H. S. Chen, J. Kwo and T. J. Negron, Phys. Rev. B36, 5592 (1987).
34. "Low Magnetic Field Superconducting Phase Diagram of the High T_cYBa₂Cu₃O_9-δ", J. E. Drumheller, G. V. Rubenacker, W. K. Ford, J. Anderson, M. Hong, S. H. Liou, J. Kwo and C. T. Chen, Solid State Comm. 64, 509 (1987).
35. "Observation of Hexagonally Ordered Flux Quanta in YBa₂Cu₃O_7-x ", P. L. Gammel, D. J. Bishop, G. J. Dolan, J. Kwo, C. A. Murray, L. F. Schneemeyer and J. V. Waszczak, Phys. Rev. Lett. 59, 2592 (1987).
36. "A Versatile Metallo-Organic Process for Preparing Superconducting Thin Films", M. E. Gross, M. Hong, S. H. Liou, P. K. Gallagher and J. Kwo, Appl. Phys. Lett. 52, 160 (1988).
37. "Oxygen Defect in YBa₂Cu₃O_x: An X-Ray Photoemission Approach", W. K. Ford, C. T. Chen, J. Anderson, J. Kwo, S. H. Liou, M. Hong, G. V. Rubenacker and J. E. Drumheller, Phys. Rev. B, Rapid Comm. 37, 7924 (1988).
38. "Epitaxial Films of High Tc Oxide Superconductor YBa₂Cu₃O₇ Grown on SrTiO₃by Molecular Beam Epitaxy", J. Kwo, T. C. Hsieh, M. Hong, R. M. Fleming, S. H. Liou, B. A. Davidson and L. C. Feldman, Proc. of Materials Research Society, 99, 339 (1988).
39. "Ion-Beam-Induced Destruction of Superconducting Phase Coherence in YBa₂Cu₃O_7-δ", A. E. White, K. T. Short, D. C. Jacobson, J. M. Poate, R. C. Dynes, P. M. Mankiewich, W. I. Skocpol, R. E. Howard, M. Anslowar, K. W. Baldwin, A. F. J. Levi, J. Kwo, T. C. Hsieh and M. Hong, Phys. Rev. B, Rapid Comm.37, 3755 (1988).
40. "Ion-Beam-Induced Destruction of Superconducting Phase Coherence in YBa₂Cu₃O_7-δ", A. E. White, K. T. Short, D. C. Jacobson, J. M. Poate, R. C. Dynes, P. M. Mankiewich, W. J. Skocpol, R. E. Howard, M. Anslowar, K. W. Baldwin, A. F. J. Levi, J. Kwo, T. C. Hsieh and M. Hong, Proc. of Materials Research Society, 99, 531 (1988).
41. "Observation of Hexagonally Ordered Flux Quanta in YBa₂Cu₃O_7-δ”, P. L. Gammel, D. J. Bishop, G. J. Dolan, J. Kwo, C. A. Murray, L. F. Schneemeyer and J. V. Waszczak, Proc. of Materials. Research Society Fall Meeting, Boston, 99, (1988).
42. "Magnetic Rare Earth Superlattices", C. F. Majkrzak, D. Gibbs, P. Boni, A. I. Goldman, J. Kwo, M. Hong, T. C. Hsieh, R. M. Fleming, D. B. McWhan, Y. Yafet, J. W. Cable, J. Bohr, H. Grimm and C. L. Chien, Proc. of the 23rd Annual Conf. on Magnetism & Magnetic Materials, J Appl. Phys. 63, 3447 (1988).
43. "Interlayer Exchange in Magnetic Superlattices", Y. Yafet, J. Kwo, M. Hong and C. F. Majkrzak, J. Appl. Phys. 63, 3453 (1988).
44. "Electronic Excitations of YBa₂Cu₃O_7-x Superconductor: a Study by Transmission Electron Energy Loss Spectroscopy with an Electron Microprobe", C. H. Chen, L. F. Schneemeyer, S. H. Liou, M. Hong, J. Kwo and H. S. Chen, Phys. Rev. B, Rapid Commun. 37, 9780 (1988).
45. "Microstructure of YBa₂Cu₃O_7-x Superconducting Thin Films Grown on SiTiO₃(100) Substrates", C. H. Chen, J. Kwo and M. Hong, Appl. Phys. Lett. 52, 841 (1988).
46. "High Tc Superconducting Y-Ba-Cu-O Oxide Films by Sputtering and Molecular Beam Epitaxy: Morphology, Structural Characterization and Superconducting Properties", S. H. Liou, M. Hong, B. A. Davidson, R. C. Farrow, J. Kwo, T. C. Hsieh, R. M. Fleming, H. S. Chen, L. C. Feldman, A. R. Kortan, and R. J. Felder, AIP Conf. Proc. 165, 12 (1988).
47. "Thin Films Research of High T_cSuperconductors", M. Hong, J. Kwo, C. H. Chen, R. M. Fleming, S. H. Liou, M. E. Gross, B. A. Davidson, H. S. Chen, S. Nakahara and T. Boone, Conf. Proc. of American Institute of Physics, 165, 189 (1988).
48. "Y-Ba-Cu-O Films by rf Magnetron Sputtering Using Single Composite Targets: Superconducting and Structural Properties", S. H. Liou, M. Hong, J. Kwo, B. A. Davidson, H. S. Chen, S. Nakahara, T. Boone and R. J. Felder, Appl. Phys. Lett. 52, 1735 (1988).
49. "Observation of a Halide (F/Cl) Stabilized, New Perovskite Phase in Superconducting YBa₂Cu₃O_7-x Films", J. Kwo, M. Hong, R. M. Fleming, A. F. Hebard, M. L. Mandich, A. M. DeSantolo, B. A. Davidson, P. Marsh and N. D. Hobbins, Appl. Phys. Lett. 52, 1625 (1988).
50. "High Critical Current Superconducting Bi-Sr-Ca-Cu-O Films by Sputtering", M. Hong, J. Kwo and J. J. Yeh, J. Crystal Growth, 91, 382 (1988).
51. "High Temperature Superconducting Oxide Films", M. Hong, J. Kwo and C. H. Chen, Proc. of 38th Electronic Components Conf. p. 146, (1988), IEEE Trans Components, Hybrids and Manufacturing Technology, 11, 407, (1988).
52. "Superconducting Properties of a 27Å Phase of Ba-Y-Cu-O", M. L. Mandich, A. M. DeSantolo, R. M. Fleming, P. Marsh, S. Nakahara, S. Sunshine, J. Kwo, M. Hong, T. Boone, T. Y.Kometani and L. Martinez-Miranda, Phys. Rev. B38, 5031 (1988).
53. "Preparation of High T_c and J_c Films of YaB₂Cu₃O_7-δ by Laser Evaporation and Observation of Superconductivity in a 27Å phase", M. L. Mandich, A. M. DeSantolo, R. M. Fleming, P. Marsh, L. Martinez-Miranda, S. Nakahara, S. Sunshine, J. R. Kwo, M. Hong, T. Boone, B. A. Davidson and T. Kometani, SPIE. 948, 66 (1988).
54. "Tunneling Characteristics of Internal Josephson Junctions in YaB₂Cu₃O_7-δ W. S. Brocklesby, D. P. Monroe, M. Hong, S. H. Liou, J. Kwo, G. J. Fisanick, P. M. Mankiewich, and R. E. Howard, Phys. Rev. B, 38, 11805, (1988).
55. "Crystal Structure of the 80K Superconductor YBa₂Cu₄O₈", P. Marsh, R. M. Fleming, M. L. Mandich, A. M. DeSantolo, J. Kwo, M. Hong, L. Maratinez-Miranda, Nature, 334, 141, (1988).
56. "Physical Processing Effects on Polycrystalline YBa₂Cu₃O_x", W. K. Ford, J. Anderson, G. V. Rubenacker, J. E. Drumheller, C. T. Chen, M. Hong, J. Kwo and S. H. Liou, Journal of Mat. Research, 4, 16, (1989).
57. "Superconducting Tl-Ba-Ca-Cu-O Films by Sputtering", M. Hong, S. H. Liou, D. D. Bacon, G. S. Grader, J. Kwo, A. R. Kortan and B. A. Davidson, Appl. Phys. Lett. 53, 2104, (1988).
58. "Magnetic Superlattices", J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, R. M. Fleming, F. J. DiSalvo, J. V. Waszczak, C. F. Majkrzak, D. Gibbs, A. I. Goldman, P. Boni, J. Bohr, H. Grimm, C. L. Chien, and J. W. Cable, Proc. of ICM 88, Journal de Physique, Colloque, C8, 1651, (1988).
59. "Transport Properties of High T_c Superconducting Oxides", A. T. Fiory, G. P. Espinosa, R. M. Fleming, G. S. Grader, M. Gurvitch, A. F. Hebard, R. E. Howard, J. Kwo, A. F. J. Levi, P. M. Mankiewich, S. Martin, C. E. Rice, L. F. Schneemeyer and A. E. White, JSAP-MRS Int'l. Conf. on Electrical Materials, Ed. T. Sugano, R. P. H. Chang, H. Kamimura, I. Hanyashi, and T. Kamiya, (Materials Research Society, Pittsburgh, PA), p. 3-8, (1989).
60. "In-situ Epitaxial Growth of YBa₂Cu₃O_7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source", J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, and K. N. Short, Appl. Phys. Lett. 53, 2683, (1988).
61. "Superconducting Bi-Sr-Ca-Cu-O Films by Sputtering using a Single Target", M. Hong, J. J. Yeh, J. Kwo, R. J. Felder, A. Miller, K. Nassau, and D. D. Bacon, AIP Conf. Proc. of Am. Vac. Soc. Meeting, 182, 122, (1989).
62. "Single-phase High T_c Superconducting Tl₂Ba₂Ca₂Cu₃O₁₀ Films", M. Hong, S. H. Liou, J. Kwo, C. H. Chen, A. R. Kortan, and D. D. Bacon, AIP Conf Proc. of Am. Vac. Soc. Meeting, 182, 1017, (1989).
63. "Properties of In-situ Superconducting YBa₂Cu₃O_7-x Films By Molecular Beam Epitaxy with an Activated Oxygen Source", J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, and K. N. Short, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 101, (1989).
64. "Tl-Based Superconducting Films By Sputtering Using a Single Target", S. H. Liou, M. Hong, A. R. Kortan, J. Kwo, D. D. Bacon, C. H. Chen, R. C. Farrow, and G. S. Grader, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 229, (1989).
65. "Superlattice Modulation and Epitaxy of Tl₂Ba₂Ca₂Cu₃O₁₀ Thin Films Grown on MgO and SrTiO₃ Substrates", C. H. Chen, M. Hong, D. J. Werder, J. Kwo, S. H. Liou, and D. D. Bacon, Appl. Phys. Lett., 54, 1579, (1989).
66. "Electrical Response of Superconducting YBa₂Cu₃O_7-x To Light", W. S. Brocklesby, Don Monroe, A. F. J. Levi, M. Hong, J. Kwo, C. E. Rice, P. M. Mankiewich, R. E. Howard, and S. H. Liou, Appl. Phys. Lett. 54, 1175, (1989).
67. "Diffraction Studies of Rare Earth Metals and Superlattices", J. Bohr, Doon Gibbs, J. D. Axe, D. E. Moncton, K. L. D'Amico, C. F. Majkrzak, J. Kwo, M. Hong, C. L. Chien, and J. Jenson, Conf. Proc. of Workshop on "X-ray and Neutron Scattering from Magnetic Materials", Physica B, 93, (1989).
68. "In-situ Growth of YBa₂Cu₃O_7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source", J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, J. P. Mannaerts, A. R. Kortan, and K. T. Short, Physica C, 162-164, 623, (1989).
69. "Properties of Superconducting Tl₂Ba₂Ca₂Cu₃O₁₀ Films by Sputtering", M. Hong, J. Kwo, C. H. Chen, A. R. Kortan, D. D. Bacon, S. H. Liou, Thin Solid Films. 181, 173-180, (1989).
70. "Materials and Tunneling Characteristics of HTSC YBa₂Cu₃O_7-x Thin Films by Molecular Beam Epitaxy", J. Kwo, M. Hong, T. A. Fulton, P. L. Gammel, and J. P. Mannaerts, in SPIE. 1187, "Processing of Films for High T_c Superconducting Electronics", p. 57. (1989).
71. "Observations of Quasiparticle Tunneling and Josephson Behavior in YBa₂Cu₃O_7-x native barrier/Pb Thin Film Junctions," J. Kwo, T. A. Fulton, M. Hong and P. L. Gammel, Appl. Phys. Lett. 56, 788, (1990).
72. "The Search for Circular Dichroism in High T_c Superconductors," K. B. Lyons, J. Kwo, J. F. Dillon, Jr., G. P. Espinosa, M. McGlashan-Powell, A. P. Ramirez and L. F. Schneemeyer, Phys. Rev. Lett. 64, 2949, (1990).
73. "Magnetic Properties of Gd/Dy Superlattices: Experiment and Theory," R. E. Camley, J. Kwo, M. Hong and C. L. Chien, Phys. Rev. Lett. 64, 2703, (1990).
74. "Materials and Tunneling Characteristics of YBa₂Cu₃O_7-x Films Grown by Molecular Beam Epitaxy," J. Kwo, Conf. Proc. of 2nd ISTEC Workshop on Superconductivity, Kagoshima, Japan, 5/28-30, 1990.
75. "Growth and Properties of High T_c Films in YBa₂Cu₃O_7-x Perovskite by Molecular Beam Epitaxy," J. Kwo, Journal of Crystal Growth, 111, 965, (1991).
76. "Magnetic Rare Earth Superlattices," C. F. Majkrzak, J. Kwo, M. Hong, Y. Yafet, D. Gibbs, C. L. Chien and J. Bohr, Journal of Advances in Physics, 40, 99-189, (1991).
77. "MBE Growth and Properties of Fe₃(Al, Si) on GaAs(100),"M. Hong, H. S. Chen, J. Kwo, A. R. Kortan, J. P. Mannaerts, B. Weir and L. C. Feldman, J. Crystal Growth, 111, 984, (1991).
78. "A Simple Way to Reduce Series Resistance in P-Doped Semiconductor Distributed Bragg Reflector," M. Hong, J. P. Mannaerts, J. M. Hong, R. J. Fisher, K. Tai, J. Kwo, J. M. Vandenberg, Y. H. Wang and J. Gamelin, J. of Crystal Growth, 111, 1052, (1991).
79. "In-situ Growth and Properties of Single Crystalline-like La_2-xSr_xCuO₄ Epitaxial Films by Off-axis Sputtering", H. L. Kao, J. Kwo, R. M. Fleming, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 59, 2748, (1991).
80. "Transport Properties of the La_2-xSr_xCuO₄ compound", H. Takagi, B. Batlogg, R. J. Cava, J. Kwo, H. L. Kao, and M. Marezio, Conf. Proc. of the Materials and Mechanism of Superconductivity, July 22 -26, 1991, Japan.
81. "Study of Intermetallic Compound Fe₃Al_xSi_1-x Epitaxially Grown on GaAs by Transmission Electron Microscopy," Y. F. Hsieh, M. Hong, J. Kwo, A. R. Kortan, H-S. Chen and J. P. Mannaerts, Conf. Proc. of the 18th International Symposium on Gallium Arsenide and Related Compounds, (1991).
82. "High Temperature Superconducting Single Crystalline-like La_2-xSr_xCuO₄ Epitaxial Films," J. Kwo and H. L. Kao, Conf. Proc. of the 4th Annual U.S./Japan Workshop on Superconductivity, Gaithersburg, MD, 11/25-26, (1991).
83. "La_2-xSr_xCuO₄ Films of Tilted CuO₂ Planes," J. Kwo, R. M. Fleming, H. L. Kao, D. J. Werder and C. H. Chen, Appl. Phys. Lett. 60, 1905, (1992).
84. "Scanning Hall Probe Microscopy of a Vortex and Field Fluctuations in La_2-xSr_xCuO₄ Films," A. M. Chang, H. D. Hallen, H. F. Hess, H. L. Kao, J. Kwo, A. Sudbo, and T. Y. Chang, Euro. Phys. Lett. 20, 645, (1992).
85. "Scanning Hall Probe Microscopy," A. M. Chang, H. D. Hallen, L. Harriott, H. F. Hess, H. L. Kao, J. Kwo, R. E. Miller, R. Wolfe, J. van der Ziel and T. Y. Chang, Appl. Phys. Lett. 61, 1974, (1992).
86. "Systematic Evolution of Temperature Dependent Resistivity in La_2-xSr_xCuO₄", H. Takagi, B. Batlogg, H. L. Kao, J. Kwo, R. J. Cava, J. J. Krajewski and W. F. Peck, Jr., Phys. Rev. Lett. 69, 2975, (1992).
87. "Out of Plane Orbital Characters of Conducting Holes in La_2-xSr_xCuO₄", C. T. Chen, L. H. Tjeng, J. Kwo, H. L. Kao, P. Rudoff, F. Sette, and R. M. Fleming, Phys. Rev. Lett. 68, 2543, (1992).
88. Reply to the Comments by K. H. Johnson, D. P. Clougherty, and M. E. McHenry, C. T. Chen, L. H. Tjeng, J. Kwo, H. L. Kao, F. Sette, and R. M. Fleming, Phys. Rev. Lett. 69, (1992).
89. "Microstructures of Thin Film La_2-xSr_xCuO₄ on SrTiO₃ and LaAlO₃", D. J. Werder, C. H. Chen, H. L. Kao, and J. Kwo, Physica C.204, 155, (1992).
90. "Charge Dynamics in Metallic CuO₂ Layers", B. Batlogg, H. Takagi, H. L. Kao, and J. Kwo, in Electronic Properties of High Tc Superconductors, The Normal and Superconducting State, Ed. H. Kuzmany et al, Springer Series in Solid-State Sciences, 113, Springer-Verlog, Berlin, Heidelberg (1993).
91. "Magnetic Properties of Epitaxial Single Crystal Ultra-thin Fe₃Si Films on GaAs (001)", S. H. Liou, S. S. Malhotra, J. X. Shen, M. Hong, J. Kwo, H. S. Chen, and J. P. Mannaerts, J. of Appl. Phys. 73, 6766, (1993).
92. "Broken Time Reversal Symmetry in Cuprate Superconductors: The Non-Reciprocal Polar Kerr Effect," K. B. Lyons, J. Dillon, S. Duclos, C. B. Eom, H. L. Kao, J. Kwo, J. M. Phillips and M. P. Siegel, Phys. Rev. B, 47, 8195, (1993).
93. "Systematic Evolution of Transport Anisotropy of La_2-xSr_xCuO₄ as a Function of Doping", H. L. Kao, J. Kwo, H. Takagi, and B. Batlogg, Phys. Rev. B. Rapid Comm. 48, 9925, (1993).
94. "Scaling of the Temperature Dependent Hall Effect in La_2-xSr_xCuO₄", H. Y. Hwang, B. Batlogg, H. Takagi, H. L. Kao, J. Kwo, R. J. Cava, J. J. Krajewski and W. F. Peck, Jr., Phys. Rev. Lett. 69, 2975, (1994).
95. "Temperature Dependence of the Resonant Magnetic X-ray Scattering in Holmium," G. Helgesen, T. Thurston, J. P. Hill, D. Gibbs, J. Kwo and M. Hong, Phys. Rev. B50, 2990, (1994).
96. "GaInO₃: A New Transparent Conducting Oxide", R. J. Cava, J. M. Phillips, J. Kwo, G. A.Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, J. H. Marshall, and D. H. Rapkine, R. J. Cava, J. M. Phillips, J. Kwo, G. A. Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, Jr., J. H. Marshall and D. H. Rapkine, Appl. Phys. Lett. 64, 2071, (1994).
97. "Transparent Conducting Thin Films of GaInO₃," J. M. Phillips, J. Kwo, G. A. Thomas, S. A. Carter, R. J. Cava, S. Y. Hou, J. J. Krajewski, J. H. Marshall, W. F. Peck, Jr., D. H. Rapkine and R. B. van Dover, Appl. Phys. Lett. 65, 115, (1994).
98. "Transprent Conducting Films of GaInO₃ by Sputtering," J. Kwo, S. A. Carter, R. J. Cava, S. Y. Hou, J. M. Phillips, D. H. Rapkine, G. A. Thomas, and R. B. Van Dover, Mat. Res. Soc. Sympos. Proc. 345, p. 241, (1994).
99. "Transparent Conducting Films Grown by Pulsed Laser Deposition," J. M. Phillips, R. J. Cava, S. Y. Hou, J. J. Krajewski, J. Kwo, J. H. Marshall, W. F. Peck, Jr., D. H. Rapkine, G. A. Thomas and R. B. van Dover, Mat. Res. Soc. Sympos. Proc., 345, p. 255, (1994).
100. "Growth and Characterization of Ba_0.5Sr_0.5TiO₃ Thin Films on Si (100) by 90°Off-Axis," S. Y. Hou, J. Kwo, R. K. Watts, D. J. Werder, J. Shmulovich and H. M. O'Bryan, Mat. Res. Soc. Symp. Proc. 343, p. 457, (1994).
101. "Charge Dynamics in La_2-xSr_xCuO₄ from Underdoping to Overdoping," B. Batlogg, H. Y. Hwang, H. Takagi, H. L. Kao, J. Kwo, and R. J. Cava, J. of Low Temp. Phys. 95, 23 (1994).
102. "Normal State Phase Diagram of La_2-xSr_xCuO₄ from Charge and Spin Dynamics," B. Batlogg, H. Y. Hwang, H. Takagi, R. J. Cava, H. L. Kao, and J. Kwo, Physica C 235-240, 130-133 (1994).
103. "Low-Resistivity Non-Alloyed Ohmic Contacts to p- and n-GaAs Using In-Situ Integrated Process,"M. Hong, D. Vakhshoori, J. P. Mannaerts and J. Kwo, Mat. Res. Soc. Proc. 337, p. 287, (1994).
104. "In-Situ Fabricated Ga₂O₃-GaAs Structures with Low Interface Recombination Velocity," M. Passlack, M. Hong, E. F. Schubert, J. Kwo, J. P. Mannaerts, S. N. G. Chu, N. Moriya and F. A. Thiel, Appl. Phys. Lett. 66, 625, (1995).
105. "Zinc Indium-Oxide: A High Conductivity Transparent Conducting Oxide," J. M. Phillips, R. J. Cava, G. A. Thomas, S. A.Carter, J. Kwo, T. Siegrist, J. J. Krajeski, J. H. Marhsall, W. F. Peck, Jr. and D. H. Rapkine, Appl. Phys. Lett. 67, 2246, (1995).
106. "Heteroepitaxial Growth of Ba_0.5Sr_0.5TiO₃/SrRuO₃on YSZ/Si by Off-Axis Sputtering", S. Y. Hou, J. Kwo, R. K. Watts, J. Y. Cheng, R. J. Cava, W. F. Peck, and D. K. Fork, Mat. Res. Soc. Symp. Proc., 361, p. 99, (1995).
107. "Structure and Properties of Epitaxial Ba_0.5Sr_0.5TiO₃/SrRuO₃/YSZ Heterostructure on Si Grown by 90 degree Off-Axis Sputtering," S. Y. Hou, J. Kwo, R. K. Watts, J. Y. Cheng and D. K. Fork, Appl. Phys. Lett. 67, 1387, (1995).
108. "Heteroepitaxial Ba_1-xK_xBiO₃/ La_2-xSr_xCuO₄ Tunnel Junctions," E. S. Hellman, J. Kwo, A. Kussmaul and E. H. Hartford, Jr., Physica C. 251, 133, (1995).
109. "Structural and Dielectric Properties of Ba_0.5Sr_0.5TiO₃ Thin Films Grown on Si by Off-Axis Sputtering," S. Y. Hou, J. Kwo, R. K. Watts, J. Y. Cheng and D. K. Fork, Integrated Ferroelectrics, 10. p. 343, (1996).
110. "Recombination Velocity at Oxide-GaAs interface Fabricated by In-situ Molecular Beam Epitaxay”, M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo, and L. W. Tu, Appl. Phys. Lett, 68, 3605, (1996).
111. "Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy," M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou and V. J. Fratello, J. of Vacuum Science Tech. B 14(3), 2297, (1996).
112. "GaAs Surface Passivation Using In-situ Oxide Deposition", M. Passlack, M. Hong, R. L. Opila, J. P. Mannaerts, and J. Kwo, Journal of Applied Surface Science, 104-105, p. 441, (1996).
113. "Novel Heterostructures Produced Using In-situ Molecular Beam Epitaxy", M. Hong, M. Passlack, D. Y. Noh, J. Kwo, and J. P. Mannaerts, in "State-of-the-art program on compound semiconductors XXIV" Ed. F. Ren et al, ECS The Electrochemical Society, p. 36, (1996).
114. "Enhancement-Mode p-channel GaAs MOSFETs on Semi-insulating Substrates", F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, IEEE International Electron Devices Meeting, San Francisco, Ca, December 8-11, 1996. IEEE IEDM Conf. Proc. 383, (1996).
115. "Low D_it Thermodynamically Stable Ga₂O₃-GaAs Interfaces: Fabrication, Characterization, and Modeling", M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo, R. L. Opila, S. N. G. Chu, N. Moriya, and F. Ren, IEEE Transaction of Electron Devices, 44 No. 2, 214-225, (1997).
116. "Novel Ga₂O₃(Gd₂O₃) Passivation Techniques To Produce Low D_it Oxide-GaAs Interfaces", M. Hong, J. P. Mannaerts, J. E. Bowers, J. Kwo, M. Passlack, W-Y. Hwang, and L. W. Tu, J. Crystal Growth, 175/176, pp.422-427, (1997).
117. "Demonstration of Enhancement-Mode p- and n-Channel GaAs MOSFETs With Ga₂O₃(Gd₂O₃) As Gate Oxide”, F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, Solid State Electronics, 41 (11), p.1751, (1997).
118. "Growth of Ga₂O₃(Gd₂O₃) Using Molecular Beam Epitaxy Techniques - Key to First Demonstration of GaAs MOSFETs", M. Hong, F. Ren, W. S. Hobson, J. M. Kuo, J. Kwo, J. P. Mannaerts, J. R. Lothian, M. A. Marcus, C. T. Liu, A. M. Sergent, T. S. Lay, and Y. K. Chen, 24^th IEEE International Symposium on Compound Semiconductors, IOP series 97^th8272, Bristol and Philadelphia, p. 319-324, (1997).
119. "Characterization of The Interfacial Electronic Properties of Oxide Films on GaAs Fabrication by In-situ Molecular Beam Epitaxy”, J. S. Hwang, W. Y. Chou, G. S. Chang, S. L. Tyan, M. Hong, J. P. Mannaerts, and J. Kwo, pp. 249-253, IOP series 97^th8272, Bristol and Philadelphia, (1997). (Based on a contributed paper given at 1997 24^th IEEE International Symposium on Compound Semiconductors)
120. "III-V Compound Semiconductor MOSFETs Using Ga₂O₃(Gd₂O₃) as Gate Dielectric”, F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, GaAs IC Symposium Technical Digest, 97CH36098, p. 18-21, (1997).
121. "Oxide-GaAs Interfacial Electronic Properties Characterized by Modulation Spectroscopy of Photoreflectance", J. S. Hwang, S. L. Tyan, Y. C. Wang, W. Y. Chou, M. Hong, J. Kwo, and J. P. Mannaerts, J. Appl. Phys., 83 (5), p.2857-9, (1998).
122. "Structural Properties of Ga₂O₃(Gd₂O₃) -GaAs Interfaces”, M. Hong, J. P. Mannaerts, M. A. Marcus, J. Kwo, A. M. Sergent, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, J. Vac. Sci. Technol. B16(3), p.1395, (1998).
123. "Depletion Mode GaAs MOSFETs With of Ga₂O₃(Gd₂O₃) as Gate Oxide”, M. Hong, F. Ren, J. M. Kuo, W. S. Hobson, J. Kwo, J. P. Mannaerts, J. R. Lothian, and Y. K. Chen, J. Vac. Sci. Technol. B16(3), p.1398, (1998).
124. "A Ga₂O₃(Gd₂O₃) /InGaAs Enhancement-Mode n-Channel MOSFET”, F. Ren, J. M. Kuo, M. Hong, W. S. Hobson, J. R. Lothian, J. Lin, W. S. Tseng, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Letters, V. 19, No. 8, p. 309, (1998).
125. "Ga₂O₃(Gd₂O₃) as a Gate Dielectric for GaAs MOSFETs”, M. Hong, J. Kwo, C. T. Liu, M. A. Marcus, T. S. Lay, F. Ren, J. P. Mannaerts, K. K. Ng , Y. K. Chen, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, "Light Emitting Devices for Optoelectronic Applications and the 28^thState-of-the-art program on compound semiconductors" Ed. H. Q. Hou et al, ECS The Electrochemical Society Proceedings, 98-2, p. 434-442, (1998).
126. "Ga₂O₃(Gd₂O₃) as a Dielectric Insulator for GaAs Device Applications”, T. S. Lay, M. Hong, J. P. mannaerts, C. T. Liu, J. Kwo, F. Ren, M. A. Marcus, K. K. Ng , Y. K. Chen, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, Conference Proceedings, SPIE-The International Society for Optical Engineering, Optoelectronic Materials and Devices, SPIE’s Asia Pacific Symposium on Optoelectronics ’98, 9-11 July 1998, Taipei, Taiwan.
127. "Depletion-Mode GaAs MOSFETs with Negligible Drain Current Drift and Hysteresis”, Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, IEEE International Electron Devices Meeting, San Francisco, CA, December 6-9, 1998. IEDM Technical Digest pp. 67-70, (1998).
128. "Semiconductor-Insulator Interfaces”, M. Hong, C. T. Liu, H. Reese, and J. Kwo in "Encyclopedia of Electrical and Electronics Engineering”, 19, p. 87-100, Ed. by J. G. Webster, Published by John Wiley & Sons, New York, (1999).
129. "Epitaxial Cubic Gd₂O₃ as a Dielectric for GaAs Passivation”, M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science, 283, p.1897-1900, (1999).
130. "Passivation of GaAs Using Gallium-Gadolinium Oxides”, J. Kwo, D. W. Murphy, M. Hong, J. P. Mannaerts, R. L. Opila, R. L. Masaitis, and A. M. Sergent, J. Vac. Sci. Technol. B 17 (3), p.1294-1296, (1999).
131. "Single Crystal Cubic Gd₂O₃ Films on GaAs – A New Dielectric For GaAs Passivation”, M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, M. C. Wu, and A. M. Sergent, in "III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectonics and Optoelectronics”, Ed. S. A. Ringel et al, Mat. Res. Soc. Symp. Proc. 535, p. 151, (1999).
132. "Compound Semiconductor MOSFET’s Using (Ga,Gd)₂O₃ as Gate Dielectric”, M. Hong, F. Ren, Y. C. Wang, J. M. Kuo, J. Kwo, J. P. Mannaerts, Y. K. Chen, and A. Y. Cho, in Int’l. Electron Devices and Materials Symp., Tainan, Taiwan, R.O.C., IEDMS’98, p. 78-81, (1998).
133. "Ga₂O₃(Gd₂O₃)/GaAs Power MOSFET’s”, Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, H. S. Tsai, J. Kwo, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, Electronics Letters, 35, No. 8, 667, (1999).
134. "Demonstration of Sub-micron Depletion-Mode GaAs MOSFET’s with negligible drain current drift and hysteresis”, Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Letters, 20, p. 457-459, (1999).
135. "The (Ga₂O₃)_1-x(Gd₂O₃)x Oxides With x = 0 – 1.0 for GaAs Passivation”, J. Kwo, M. Hong, A. R. Kortan, D. W. Murphy, J. P. Mannaerts, A. M. Sergent, Y. C. Wang, and K. C. Hsieh, in"Compound semiconductor surface passivation and novel device processing”, Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton, Materials Research Society Proc. 573, pp. 57-68, (1999).
136. "Structure of Single Crystal Gd₂O₃ Films on GaAs (100)”, A. R. Kortan, M. Hong, J. R. Kwo, J. P. Mannaerts, and N. Kopylov, in "Compound semiconductor surface passivation and novel device processing”, Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton, Materials Research Society Proc. 573, pp. 21-30, (1999).
137. "Advances in GaAs MOSFETs Using Ga₂O₃(Gd₂O₃) as Gate Oxide”, Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, J. S. Weiner, Y. K. Chen, and A. Y. Cho, in >"Compound semiconductor surface passivation and novel device processing”, Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton, Materials Research Society Proc. 573, pp. 219-226, (1999).
138. "Energy Band Offsets at a Ga₂O₃(Gd₂O₃)-GaAs Interface”, T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, and D. J. Huang, in "Compound semiconductor surface passivation and novel device processing”, Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton, Materials Research Society Proc. 573, pp. 131-136, (1999).
139. "Passivation of GaAs Using (Ga₂O₃)_1-x(Gd₂O₃)_x, (x=0 – 1.0) Films”, J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, R. L. Masaitis, and A. M. Sergent, Appl. Phys. Lett., 75,1116, (1999).
140. "Structure of Epitaxial Gd₂O₃ Films Grown on GaAs (100)”, A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, and N. Kopylov, Phys. Rev. B60, 10913, (1999).
141. "The Structure of Epitaxial Gd₂O₃ Films and Their Registry on GaAs (100) Substrates”, B. Bolliger, M. Erbudak, M. Hong, J. Kwo, A. R. Kortan, and J. P. Mannaerts, 8^th European Conf. Proc. On Application of Surface and Interface Analysis, Oct. 4-8, Svelle, Spain, (1999).
142. "Initial Growth of Ga₂O₃(Gd₂O₃) on GaAs – Key to The Attainment of a Low Interfacial Density of States”, M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, and K. Y. Cheng, Appl. Phys. Lett. 76 (3), 312, (2000).
143. "Neutron Scattering on Magnetic Thin Films: Pushing the Limits”, A. Schreyer, T. Schmitte, R. Siebrecht, H. Zabel, S. H. Lee, R. W. Erwin, J. Kwo, M. Hong, and C. F. Majkrzak, an invited paper in the 44^th Annual Conference on Magnetism and Magnetic Materials, San Jose, (1999), and J. Appl. Phys. 87 (9), p.5443-5448, (2000).
144. "Characteristics of Ga₂O₃(Gd₂O₃) /GaAs Interface-Structures and Compositions”, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, J. J. Krajewski, Z. H. Lu, K. C. Hsieh, and K. Y. Cheng, 18^th NAMBE and J. Vac. Sci. Technol. B18, 1688, (2000).
145. "High ε gate dielectrics Gd₂O₃ and Y₂O₃ for Si”, J. Kwo, M. Hong, A.R. Kortan, K. T. Queeney, Y. J. Chabal, J. P. Mannaerts, T. Boone, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, Appl. Phys. Lett., 77, 130, (2000).
146. "Properties of Ga₂O₃(Gd₂O₃)/GaN MIS Diodes”, M. Hong, K. A. Anselm, J. P. Mannaerts, J. Kwo, A. Y. Cho, A. R. Kortan, C. M. Lee*, J. I. Chyi*, and T. S. Lay, 18^th NAMBE and J. Vac. Sci. Technol. B18, 1453, (2000).
147. "Extended x-ray Absorption Fine Structure Measurement of Bond-Length Strain in Epitaxial Gd₂O₃ on GaAs (001)”, E. J. Nelson, J. C. Woicik, M. Hong, J. Kwo, and J. P. Mannaerts, Appl. Phys. Lett, 76, 2526, (2000).
148. "Defect Dominated Charge Transport in Amorphous Ta₂O₅ Thin Films” R. M. Fleming, D. V. Lang, C. D. W. Jones, M. L. Steigerwald, D. W. Murphy, G. B. Alers, Y. H. Wong, R. B. van Dover, J. Kwo, and A. M. Sergent, J. Appl. Phys, 88, 850, (2000).
149. "Insulator/GaN heterostructures of low interfacial density of states”, M. Hong, H. M. Ng, J. Kwo, A. R. Kortan, J. N. Baillargeon, K. A. Anselm, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay, F. Ren, C. R. Abernathy, and S. J. Pearton, in MRS Conf. Proc."Wide bandgap electronic devices” Ed. by R. J. Shul, W. Pletschen, F. Ren, and M. Murakami, 2000.
150. "GaAs MOSFET – Achievements and challenges”, M. Hong, Y. C. Wang, F. Ren, J. P. Mannaerts, J. Kwo, A. R. Kortan, J. N. Baillargeon, and A. Y. Cho,"Compound semiconductor power transistors II and state-of-the-art porgram on compound semiconductors (SOTAPOCS XXXII), Ed. by R. Kopf, A. G. Baca, and S. N. G. Chu ECS Proc. volume 2000-1, p202.
151. "Low D_itDielectric/GaN MOS Systems”, M. Hong, H. M. Ng, J. Kwo, A. R. Kortan, J. N. Baillargeon, S. N. G. Chu, J. P. Mannaerts, A. Y. Cho, F. Ren, C. R. Abernathy, S. J. Pearton, and J. I. Chyi, in "Compound semiconductor power transistors II and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII), Ed. by R. Kopf, A. G. Baca, and S. N. G. Chu ECS Proc. volume 2000-1, p. 103.
152. "Charge Transport in Anodized Ta₂O₅ Thin Films”, C. D. W. Jones, R. M. Fleming, D. V. Lang, M. L. Steigerwald, D. W. Murphy, B. Vyas, G. B. Alers, Y. H. Wong, R. B. van Dover, J. Kwo, A. M. Sergent, 197^th Electrochemical Society Meeting, Toronto, Ontario, Canada, May 14-19, (2000).
153. "The Structural Modifications of the Gd₂O₃ (110) Films on GaAs (100)”, C. Steiner, B. Bolliger, M. Erbudak, M. Hong, A. R. Kortan, J. Kwo, and J. P. Mannaerts, Phys. Rev. B rapid communications, Phys. Rev. B 62, R10, 614, (2000).
154. "Structure of the fluorite related Gd₂O₃ film on GaAs (100)”, A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C. Steiner, B. Bolliger, and M. Erbudak, submitted to Phys. Rev. B, 2000.
155. "GaAs MOSFET – Material Physics and Devices”, M. Hong, and J. Kwo, A. R. Kortan, J. P. Mannaerts, Y. C. Wang, and T. S. Lay, Proc. of the 8th Asia-Pacific Physics Conference, p. 3, Ed. by Y.-D. Yao et al, World Scientific publishing Co. Singapore, 2000.
156. "Single Crystal Rare Earth Oxides on GaN”, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, C. M. Lee, and J. I. Chyi, submitted to Appl. Phys. Lett. 2000.
157. "Properties of High k Gate Dielectrics Gd₂O₃ and Y₂O₃ for Si”, J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, Jr., D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay^a), J. P. Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, J. Appl. Phys, 89, 3920, 2001.
158. "First demonstration of GaAs CMOS”, J. N. Baillargeon, M. Hong, J. P. Mannaerts, J. Kwo, C. T. Liu, and A. Y. Cho, in 2000 IEEE International Symposium on Compound Semiconductors, IEEE publication series 00TH8498, p.345-350.
159. "Single crystal rare earth oxides epitaxially grown on GaN" by M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, C. M. Lee, and J. I.Chyi, in 2000 IEEE International Symposium on Compound Semiconductors, IEEE publication series 00TH8498, p.495.
160. "New Phase Formation of Gd₂O₃ films on GaAs (100)”, A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C. Steiner, B. Bolliger, and M. Erbudak, J. Vac. Sci. Technol. B. 19 (4), 1434, (2001).
161. "Interface Reactions of High-k Y₂O₃ Gate Oxides With Si”, B. W. Busch, J. Kwo, M. Hong, J. P. Mannaerts, and B. J. Sapjeta, W. H. Schulte, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett, 79, 2447 (2001).
162. "Probing the microscopic compositions at Ga₂O₃(Gd₂O₃)/GaAs interface by core level photoelectron spectroscopy”, T. S. Lay, K. H. Huang, W. H. Hung, M. Hong, J. Kwo, and J. P. Mannaerts, Solid State Electronics, 45, pp. 423-426, 2001.
163. "C-V and G-V characterization of Ga₂O₃(Gd₂O₃)/GaN capacitor with low interface state density”, T. S. Lay, W. D. Liu, M. Hong, J. Kwo, and J. P. Mannaerts, Electronics Letters, Vol. 37, No. 9, 595 (2001).
164. "Energy-band parameters at the GaAs- and GaN-Ga₂O₃(Gd₂O₃) interfaces”, T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, and D. J. Huang, Solid State Electronics, 2001.
165. "A Comparison of Gallium Gadolinium Oxide and Gadolinium Oxide for use as Dielectrics in GaN MOSFET”, B. P. Gila, K. N. Lee, W. Johnson, F. Ren, C. R. Abernathy, S. J. Pearton, M. Hong, J. Kwo, J. P. Mannaerts and K. A. Anselm, (invited talk) p.182-91, Proceedings (ISBN: 0-7803-6381-7) 2000 IEEE/Cornell Conference on High Performance Devices, Ithaca, NY, USA, 7-9, Aug. 2000. Sponsors: IEEE Electron Dev. Soc., IEEE Microwave Theory & Tech. Soc., School of EE., Cornell U.
166. "Medium energy ion scattering studies of the thermal evolution of alternative gate dielectric thin films”,D. Starodub, B.W. Busch, J. Kwo, T. Nishimura, S. Sayan, W.H. Schulte, T. Gustafsson and E. Garfunkel, Conf. Proc. of High k Dielectrics, Brazil, Sep., 2001.
167. "High κ gate dielectrics for the silicon industry” L. Manchanda, B. Busch, M. L. Green, M. Morris, R. B. van Dover, R. Cow, and S. Aravamudhan, IWGI 2001 Extended Abstracts of International Workshop on Gate Insulator, 2001, Page(s): 56 –60.
168. "Interface reactions of high-kY₂O₃ gate oxides with Si”, B. W. Busch, J. Kwo, M. Hong, J. P. Mannaerts, B. J. Sapjeta, W. H. Schulte*, E. Garfunkel*, and T. Gustafsson*, Conf. Proc. of the 2001 IEEE Semiconductor Interface Specialists Conference (SISC), Washington D.C., Nov. 28 – Dec. 1, 2001.
169. "Single crystal GaN/Gd₂O₃/GaN heterostructure”, M. Hong, A. R. Kortan, H. M. Ng, J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, and K. A. Anselm, J. Vac. Sci. Technol. B 20(3), 1274, (2002).
170. "Materials Characterization of Alternative Gate Dielectrics”, B.W. Busch, O. Pluchery, Y.J. Chabal, D.A. Muller, R.L. Opila, J.R. Kwo, and E. Garfunkel, in "Alternative Gate Dielectrics for Microelectronics”, Ed. By G. Wilk, and R. Wallace, Materials Research Bulletin, Vol. 27, No. 3, p.206-211, (2002).
171. "Electrical characteristics of ultrathin Pt/Y₂O₃/Si capacitor with rapid post-metallization annealing”, T. S. Lay, W. D. Liu, J. Kwo, M. Hong, and J. P. Mannaerts, IEE Electronics Letters 38, No. 24, p. 1594-1596, (2002).
172. "GaN/Gd₂O₃/GaN Single Crystal Heterostructure”, M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, and G. Dabbagh, A. R. Kortan, H. M. Ng, A. Y. Cho, and K. A. Anselm, C. M. Lee, and J. I. Chyi, Electrochemical Society Proceedings, Volume 2002-3, p. 36-45.
173. "Advances in High κ Gate Dielectrics for Si and III-V Semiconductors”, J. Kwo, M. Hong, B. Busch, D. A. Muller*, Y. J. Chabal, A. R. Kortan*, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, and T. Gustafsson, J. Crystal Growth, 251, 645, (2003).
174. "High κ Gate Dielectrics For Si And Compound Semiconductors By MBE”, J. Kwo and M. Hong, MRS Proceedings Vol. 745, Symposium of "Novel Materials and Processes for Advanced CMOS”, edited by Mark I. Gardner, Stefan De Gendt, Jon-Paul Maria, and Susanne Stemmer, p. 311, (2003).
175. "Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga₂O₃ (Gd₂O₃) as gate dielectric”, B. Yang, P. Ye, J. Kwo, M. Frei, H. Gossmann, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, J. Crystal Growth, 251, 837, (2003).
176. "DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga₂O₃/Gd₂O₃ layer (74Å) as gate dielectric”, B. Yang, P. D. Ye, J. Kwo, M. R. Frei, H. J. Gossmann, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, 2002 IEEE GaAs Digest, p. 139, (2002).
177. "GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. R. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, IEEE Electron Device Letters 24, No.4, 209, (2003).
178. "GaAs MOSFET with nm-thin dielectric grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 83, 180, (2003).
179. "Optimization of AuGe/Ni/Au ohmic contacts for GaAs MOSFETs”, H. C. Lin, S. Senanayake, and K. Y. Cheng, M. Hong, J. Kwo, B. Yang, and J. P. Mannaerts, IEEE Trans. Electron Dev., 50, no. 4, 880, (2003).
180. "Schottky Barrier Height and Interfacial State Density on Oxide-GaAs Interface”, J. S. Hwang, M. F. Chen, C. C. Chang, M. F. Chen, C. C. Chen, K. I. Lin, F. C. Tang, M. Hong, and J. Kwo, J. Appl. Phys. 94, 348, (2003).
181. "Rapid post-metallization annealing effects on high-κ Y₂O₃/Si capacitor”, T. S. Lay , Y. Y. Liao, W. D. Liu, Y. H. Lai, W. H. Hung, J. Kwo, M. Hong, J. P. Mannaerts, Solid State Electronics 47, 1021-1025 Jun (2003) (SCI: 1.008)
182. "Depletion Mode InGaAs Metal Oxide Semiconductor Field Effect Transistor with Gate Oxide Dielectrics Grown by Atomic Layer Deposition ", P.D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gosserman, M. Hong, K. K.Ng, and J. Bude, Appl. Phys. Lett., 84, 434, (2004).
183. "GaAs-based metal-oxide-semiconductor field-effect-transistors with Al₂O₃gate dielectrics grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann, M. Frei, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, J. Electron. Mater. 33, 912, (2004).
184. "Structures of Sc₂O₃ films epitaxially grown on α-Al₂O₃ (111)”, A. R. Kortan, M. Hong, J. Kwo, P. Chang, C. P. Chen, J. P. Mannaerts, and S. H. Liou in Integration of Advanced Micro- and Nanoelectronic Devices—Critical Issues and Solutions, edited by J. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R.M. Wallace, S. Guha, and H. Koinuma (Mater. Res. Soc. Symp. Proc. 811, Warrendale, PA , 2004), p. E1.2.
185. "Epitaxial Growth and Structure of Thin Single Crystal γ-Al₂O₃ Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum”, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, and S. Y. Wu, in Integration of Advanced Micro- and Nanoelectronic Devices—Critical Issues and Solutions, edited by J. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R.M. Wallace, S. Guha, and H. Koinuma (Mater. Res. Soc. Symp. Proc. 811, Warrendale, PA , 2004), p. D9.5.
186. "Fundamental study and oxide reliability of the MBE grown Ga_2-xGd_xO₃ dielectrics for compound semiconductor MOSFET’s”, J. Kwo, M. Hong, J. P. Mannaerts, Y. D. Wu, Q. Y. Lee, B. Yang, and T. Gustafsson, in Integration of Advanced Micro- and Nanoelectronic Devices—Critical Issues and Solutions, edited by J. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R.M. Wallace, S. Guha, and H. Koinuma (Mater. Res. Soc. Symp. Proc. 811, Warrendale, PA , 2004), p. E1.12.
187. "High-quality thin single crystal γ-Al₂O₃ films grown on Si (111)”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, "Tailoring Oxide-Semiconductor Interfaces – an enabling sub-nano approach for new science and next-generation high speed and high power devices” (氧化物-半導體界面控制 – 次奈米尺寸新興科學解決方案及次世代高速操作高功率元件), in Taiwan Nanotechnology (台灣奈米科技 – 從 2004 到嚮往的大未來), published by Nano-technology center of Industrial Technology Research Institute, Hsin Chu, Taiwan, 2004.
188. "High κ Gate Dielectrics for Si Nano Electronics”, J. Raynien Kwo, to appear in第一屆台灣分子束磊晶科技研討會,真空科技, National Sun Yat-Sen University, Kaohsiung, Taiwan, April 29-30, 2004.
189. "The Quest for the Compound Semiconductor MOSFET – Technology beyond Si/SiO₂ MOS”, M. Hong and J. Kwo, Plenary talk at MBE TAIWAN 2004, 第一屆台灣分子束磊晶科技研討會,真空科技, National Sun Yat-Sen University, Kaohsiung, Taiwan, April 29-30, 2004.
190. "Towards GaAs MOSFET – MBE Growth, Processing, and Characterization”, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, M. Hong, J. Kwo, J. Chi, and J. P. Mannaerts, 第一屆台灣分子束磊晶科技研討會,真空科技, National Sun Yat-Sen University, Kaohsiung, Taiwan, April 29-30, 2004.
191. "Single Crystal γ-Al₂O₃ Films on Si (111) – Epitaxial Growth, Structural, and Electrical Properties” S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, and J. P. Mannaerts, 第一屆台灣分子束磊晶科技研討會, 真空科技, National Sun Yat-Sen University, Kaohsiung, Taiwan, April 29-30, 2004.
192. "MBE Grown HighκGate Dielectrics of HfO₂ and (Hf-Al)O₂ for Si and III-V Semiconductors Nano-electronics”, W. G. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts , S. Maikap, C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, R. L. Lo, M. Hong and J. Kwo, 第一屆台灣分子束磊晶科技研討會,真空科技, National Sun Yat-Sen University, Kaohsiung, Taiwan, April 29-30, 2004.
193. "Demonstration of Atomically Abrupt Interface of HfO₂ High κ Gate Dielectrics with Si for Nano CMOS”, Wei-Jin Lee, Yi-Jun Li, Ya-Ling Hsu, Kuen-Yu Lee, Chi-Hsin Chu, Chien-Chung Huang, Y. L. Huang, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S. Lee, Shi-Yen Lin, Minghwei Hong, and Raynien Kwo, extended abstract in the proceeding of the Taiwan International Conference on Nano science, June 30-July3, 2004.
194. "Recent Advances in High κfor Nano CMOS”, J. Kwo, extended abstract in the proceeding of the Taiwan International Conference on Nano science, June 30-July3, 2004.
195. "Tailoring Oxide-Semiconductor Interfaces – an Enabling Sub-nano Approach for New Science and Advanced Devices” , M. Hong and J. Kwo, extended abstract in the proceeding of the Taiwan International Conference on nano science, June 30-July 3, 2004.
196. "MBE Grown HfO₂ High κ Gate Dielectrics for Si Nano CMOS”, Wei-Jin Lee, Yi-Jun Lee, Chi-Hsin Chu, Kuen Yu Lee,,, Kuo-Liang Chaw, Ya-Ling Hsu, Ching Han Pan, F. R. Chen, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S. Lee, Minghwei Hong, and J. Raynien Kwo, submitted to IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.
197. "Synthesis of HfO₂ High κ Gate Dielectrics by Sputter Deposition”, Yen-Dar Wu, Chien-Chung Huang, Yi-Jun Lee, Ya-Ling Hsu, Chi-Hsin Chu, Kuo-Liang Jaw, Wei-Jin Lee, Ching Han Pan, F. R. Chen, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S. Lee, Minghwei Hong, and J. Raynien Kwo, submitted to IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.
198. "HfO₂ and Sc₂O₃ High κ Dielectrics for GaAs Compound Semiconductor Passivation”, Hsiang-Bie Chang, Wei-Jin Lee, Yi-Lin Huang, Chieh-Ping Chen, Yi-Jun Lee, Ya-Ling Hsu T. Gustafsson, E. Garfunke, Minghwei Hong, and J. Raynien Kwo, submitted to IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.
199. "Towards GaAs MOSFET: MBE Growth, Processing, Characterization, and Analysis”, K. Jaw, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, J. P. Mannearts, J. Chi, J. R. Kwo, and M. Hong, submitted to IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.
200. "原子尺寸下氧化物與半導體界面的剪裁控制: 一個在次奈米尺寸底下新穎科學的發現及對次世代高功能元件製造的解決方案”, 洪銘輝和郭瑞年, 國立清華大學; "Tailoring Oxide-Semiconductor Interfaces – an Enabling Sub-nano Approach for New Science and Advanced Devices”, M. Hong and J. Kwo, to appear in the Electronics Spectrum, the News Lettter of Electron Devices and Materials Association, Taiwain, Ed. Y. H. Wang, vol 10, no. 2, (2004).
201. "MBE Grown High κ Gate Dielectrics of HfO₂and (Hf-Al)O₂ for Si and III-V Semiconductors Nano-electronics, W. G. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts , S. Maikap, C. W. Liu, L. S. Lee, M. J. Tsai, S. Y. Lin, T. Gustffson, M. Hong, and J. Kwo, J. Crystal Growth, 278, 619-623, (2005).
202. "Epitaxial Growth and Structure of Thin Single Crystal Sc₂O₃Films on Si (111)”, C .P. Chen, M. Hong, J. Kwo, H.-M. Cheng, Y. L. Hwang, S. Y. Lin, J. Chi, H.-Y. Lee, and J. P. Mannaerts, J. Crystal Growth, 278, 638-642, (2005).
203. "Depth Profile Study of the Electronic Structures at Ga₂O₃(Gd₂O₃) and Gd₂O₃/GaN interfaces by x-ray photoelectron spectroscopy. ", T. S. Lay, Y. Y. Liao, W. H. Hung, M.Hong, J. Kwo, and J. P. Mannaerts, 2004 International MBE conference proceeding, J. Crystal Growth, 278, 624-628, (2005).
204. "Depth-profiling the electronic structures at HfO₂/Si interface grown by molecular beam epitaxy”, T. S. Lay, S. C. Chang, C. C. Yeh, W. H. Hung, J. Kwo and M. Hong, J. Vac. Sci. & Technol. 23(3), 1291-1293, (2005).
205. "Thermodynamic stability of Ga₂O₃ (Gd₂O₃)/GaAs Interface at High Temperatures”, Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong, Appl. Phys. Lett. 86, 191905, (2005).
206. "High-quality Nano-thick Single Crystal γ-Al₂O₃ Films Grown on Si (111)”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, W. G. Lee, and Y. L. Huang, Appl. Phys. Lett. 87, 091908, (2005).
207. "High-quality Thin Single Crystal Sc₂O₃ Films Grown on Si (111)”, M. Hong, A. R. Kortan, P. Chang, C. P. Chen, Y. L. Huang, H. Y. Chou, H. Y. Lee, J. Kwo, M.-W. Chu, C. H. Chen, L. Goncharova, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 87, 251902, (2005).
208. "Surface Passivation of III-V Compound Semiconductors Using Atomic-layer-deposition Grown Al₂O₃”, M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, and P. Chang, J. Kwo, T. B. Wu and M. Hong , Appl. Phys. Lett. 87, 252104, (2005).
209. "Depletion-mode InGaAs/GaAs MOSFET with oxide passivated by amorphous Si”, P. J. Tsai, U. N. Chiu, L. K. Chu, Y. W. Chen, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, Journal of Taiwan Vacuum Society vol. 18, No. 3, 4, (2005).
210. "Advances in High κ Gate Oxides for Si and Compound Semiconductor Nanoelectronics”, J. Kwo, and M. Hong, in the extended abstract in the Conference Proceeding of the Bio-Nano-InFo-Fusion Conference, July 20-22, (2005).
211. "Advanced high κ dielectrics for nano-electronics – science and technologies”, M. Hong and J. Kwo, invited talk at 208th ECS, and a book chapter in the conf. proceedings, (2005).
212. "Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High κ Materials on Si ”, T. Gustafsson, R. Garfunkel, L. Goncharova, D. Starodub, R. Barnes, M. Dalponte, G. Bersuker, B. Fordan, D. G. Sholom, V. Vaithyanathan, M.Hong, and J. Kwo, in"Defects in Advanced High k Dielectric Nano-electronic Semiconductor Device”, Ed. E.P. Gusev, Springer, Netherlands, (2005).
213. "High κ Gate Dielectrics for Compound Semiconductors, by J. Kwo and M. Hong , in "ADVANCED GATE STACKS ON HIGH-MOBILITY SEMICONDUCTORS”, edited by A. Dimoulas, E. Gusev, P. McIntyre, M. Heyns, Springer publishing company in the Springer Series Materials Science, (2006).
214. "Structure of Sc₂O₃ films epitaxially grown on α-Al₂O₃ (0001), A. R. Kortan*, N. Kopylov, J. Kwo, M. Hong*, C. P. Chen, J. P. Mannaerts, and S. H. Liou, Appl. Phys. Lett. 88, 021906, (2006).
215. "Scanning Atomic Force Microscopic Nanolithography on Hafnium Oxide Thin Film Grown on Si (100)”, Rong-Li Lo*, W.-C. Lee and J. Kwo, Jpn. J. Appl. Phys. 45, 2067, (2006).
216. "Energy-band parameters of atomic-layer-deposition-Al₂O₃/InGaAs heterostructures”, M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo, T. B. Wu, and M. Hong*, Appl. Phys. Lett. 89, 012903, (2006).
217. "Structural and electrical studies of Ga₂O₃(Gd₂O₃)/GaAs under high temperature annealing”, C. P. Chen, Y. J. Lee, Y. C. Chang, Z. K. Yang, M. Hong*, J. Kwo, H. Y. Lee, and T. S. Lay, J. Appl. Phys. 100, 104502, (2006).
218. "Structure of HfO₂ films epitaxially grown on GaAs (001)”, C. H. Hsu, P. Chang, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo*, C. M. Huang, and H. Y. Lee, Appl. Phys. Lett. 89, 122907, (2006).
219. "A molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics”, K. Y. Lee, W. C. Lee, Y. J. Lee, M. L. Huang, C. H. Chang, T. B. Wu, M. Hong, and J. Kwo*, Appl. Phys. Lett. 89, 222906, (2006).
220. "Interfacial self-cleaning of atomic layer deposition of HfO₂ gate dielectrics on In_0.15Ga_0.85As”, C. H. Chang, Y. K. Chiu, Y. C. Chang, K. Y. Lee, T. D. Lin, T. B. Wu*, M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 242911 (2006).
221. "A novel approach of using a MBE template for ALD growth of high κ dielectrics”, K. Y. Lee, W. C. Lee, M. L. Huang,, C. H. Chang, Y. J. Lee, Y. K. Chiu, T. B. Wu, M. Hong and J. Kwo*, Journal of Crystal growth, 301-302, 378-380, (2007).
222. "MBE Grown High-Quality Gd₂O₃/ Si (111) Heterostructure”, T. D. Lin, M. C. Hang, P. Chang, W. C. Lee, Z. K. Yang, H. Niu, C. H. Hsu, J. Kwo, and M. Hong*, Journal of Crystal growth, 301-302, 386-389, (2007).
223. "MBE grown high κ dielectrics of Ga2O3(Gd2O3) for GaN”, Y. C. Chang, Y. N. Chiu, S. Y. Wu, H. C. Chiu, P. Chang, Y. J. Lee, J. Kwo, Y. H. Wang, and M. Hong*, Journal of Crystal growth, 301-302, 390-393, (2007).
224. "Structural and Magnetic properties of Epitaxial Fe₃Si/GaAs Heterostructures”, Y. L. Hsu, M. L. Huang, Y. N. Chiu, C. C. Ho, P. Chang, C. H. Hsu, M. Hong and J. Kwo*, Journal of Crystal growth, 301-302, 588-591, (2007).
225. "Interfacial trap characteristics in depletion mode GaAs MOSFETs”, T. C. Lee, C. Y. Chan, P. J. Tsai, Shawn S. H. Hsu, J. Kwo, M. Hong*, Journal of Crystal growth, 301-302, 1009-1012, (2007)
226. "Depletion mode GaAs-based MOSFET with Ga₂O₃(Gd₂O₃) as a gate dielectric”, P. J. Tsai, L. K. Chu, Y. W. Chen, U. N. Chiu, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong*, Journal of Crystal growth, 301-302, 1013-1016, (2007).
227. "Defining new frontiers in electronic devices with high κ dielectrics and interfacial engineering”, M. Hong*, W. C. Lee, M. L. Huang, Y. C. Chang, T. D. Lin, Y. J. Lee, J. Kwo, C. H. Hsu and H. Y. Lee, Thin Solid Films, 515, 5581 (2007).
228. "III-V MOSFET’s with High κ Dielectrics”, M. Hong, J. Kwo, P. J. Tsai , Y. C. Chang, M. L. Huang , C. P. Chen, and T. D. Lin, Japan, Jpn. J. Appl. Phys. 46, 5B, 3167 (2007).
229. "Advance in Next Century Nano CMOSFET Research and Its Future Prospects for Industry”, Huey-liang Hwang, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, J. Kwo, and Minghwei Hong, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Chun-Chang Lu, Yin Yin Kyi, Albert Chin, Chun-Heng Chen, Joseph Ya-min Lee, and Fu-Chien Chiu, Applied Surface Science, 254(1), 236-241, (2007).
230. "Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO₂ for gate dielectric applications”, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu*, J. Kwo and Minghwei Hong, Journal of The Electrochemical Society, 154 (4) G99-G102 (2007).
231. "Cubic HfO₂ doped with Y₂O₃ epitaxial films on GaAs (001) with high dielectric constant”, Z. K. Yang, Y. J. Lee, W. C. Lee, P. Chang, M. L. Huang, and M. Hong, C.-H. Hsu, J. Kwo*, Appl. Phys. Lett. 90, 152908 (2007).
232. "Structural and compositional investigation of yttrium-doped HfO₂ films epitaxially grown on Si (111)”, Z. K. Yang, Y. J. Lee, W. C. Lee, P. Chang, M. L. Huanga), M. Hong, K. L. Yu, M.-T. Tang, and C.-H. Hsu*, and J. Kwo* , Appl. Phys. Lett, 91, 202909 (2007).
233. "Structural and electrical characteristics of atomic layer deposited high κ HfO₂on GaN”, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, and M. Hong*, Y. N. Chiu, J. Kwo, and Y. H. Wang, Appl. Phys. Lett. 90, 232904 (2007).
234. "Observation of room temperature ferromagnetic behavior in cluster free in Co doped HfO₂ films”, Y. H. Chang, Y. L. Soo, S. F. Lee, W. C. Lee, M. L. Huang, Y. J. Lee, S. C. Weng, W. H. Sun, J. M. Ablett, C-. C. Kao, M. Hong, and J. Kwo*, Appl. Phys. Lett.91, 082504 (2007).
235. "Local environment Surrounding Co in MBE-grown Co-doped HfO₂ thin films probed by extended X-ray absorption fine structure”, Y. L. Soo, S. C. Weng, W. H. Sun, S. L. Chang, W. C. Lee, Y. S. Chang, J. Kwo, M. Hong, J. M. Ablett, C-. C. Kao, D. G. Liu, and J. F. Lee, Phys. Rev. B. Brief Report, 76, 132404 (2007).
236. "Ga₂O₃(Gd₂O₃)/Si₃N₄ Dual Layer Gate Dielectric for InGaAs Enhancement Mode MOSFET with Channel Inversion”, J. F. Zheng, W. Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, and M. Hong*, J. Kwo, S. Cui, and T. P. Ma, Appl. Phys. Lett, 91, 223502, (2007).
237. "Time dependent preferential sputtering in the HfO₂ layer on Si”, S. J. Chang, W. C. Lee, J. C. Huang*, M. Hong, and J. Kwo, Thin Solid Films, 516, 948 (2008).
238. "Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor device with high-κ gate dielectrics”, S. L. You, C. C. Huang, H. C. Ho, J Kwo*, W. C. Lee and M. Hong, Appl. Phys. Lett. 92,012113 (2008).
239. "Transmission Electron Microscopy Characterization of HfO₂/GaAs Heterostructures Grown by Molecular Beam Epitaxy”, S. C. Liou, M.W. Chu*, C. H. Chen, Y. J. Lee, P. Chang, W. C. Lee, Z. K. Yang, M. Hong, J.Kwo, Applied Physics A-materials science and processing, 91, 585, (2008).
240. "Nano-meter thick Y₂O₃ films grown on Si (111) approaching a structural perfection”, C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K. Yang, A. R.Kortan, M. Hong*, J. Kwo, and C. H. Hsu*, Appl. Phys. Lett, 92, 061914(2008).
241. "Atomic-layer-deposited HfO₂ on In_0.53Ga_0.47As – passivation and energy-band parameters”, Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee,T. D. Lin, M. Hong *, J. Kwo* , T. S. Lay, C. C. Liao and K. Y. Cheng,Appl. Phys. Lett, 92, 072901 (2008).
242. "Si metal-oxide-semiconductor devices with high κ dielectrics fabricated using a novel MBE template approach followed by atomic layer deposition”, C. H. Pan, J. Kwo*, K. Y. Lee, W. C. Lee, L. K. Chu, M. L.Huang, Y. J. Lee, and M. Hong, JVST 2008, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007,Conf. Proc in J. Vacu. Scien. Tech. 26, 1178, (2008).
243. "Growth and Structural Characteristics of GaN/AlN/nano thickg-Al₂O₃/Si (111) ”, W. C. Lee, Y. J. Lee, L. T. Tung, S. Y. Wu, C. H. Lee,M. Hong*, H. M. Ng, J. Kwo, and C. H. Hsu, JVST 2008, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA,September 23-26, 2007, Conf. Proc. in J. Vacu. Scien. Tech. 26, 1064, (2008).
244. "High-quality nano thick single crystal Y₂O₃ films epitaxially grown on Si (111) – growth and structural characteristics”, Y. J. Lee, W. C. Lee, C. W. Nieh, Z. K. Yang, A. R. Kortan, M. Hong*, J. Kwo, and C.-H. Hsu, JVST 2008. 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007. Conf. Proc.in J. Vacu. Scien. Tech. 26, 1124 (2008).
245. "Oxide scalability in Ga₂O₃(Gd₂O₃)/In _0.2Ga_0.80As/GaAs hetero-structures”, K. H. Shiu, C. H. Chiang, Y. J. Lee, W. C. Lee, P. Chang, L. T. Tung, M. Hong* , J. Kwo, and W. Tsai, JVST 2008. 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA,September 23-26, 2007, Conf. Proc. to be published in J. Vacu. Scien. Tech. 26, 1132, (2008).
246. "Molecular beam epitaxy grown Ga₂O₃ (Gd₂O₃) high-κ dielectrics for Germanium passivation-x-ray photoelectron spectroscopy (XPS) and electrical characteristics”, C. H. Lee, T. D Lin, K. Y. Lee, L. T. Tung, Y.C. Chang, M. L. Huang, M. Hong*, and J. Kwo, JVST 2008, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007, Conf. Proc. in J. Vacu. Scien. Tech. 26, 1128, (2008).
247. "Correlation between Crystal Structure and Photoluminescence for Epitaxial ZnO on Si (111) using a g-Al₂O₃ Buffer Layer”, W.-R. Liu, Y.-H.Li, and W. F. Hsieh*, C.-H. Hsu*, W. C. Lee, M. Hong, J. Kwo, J. Physics,D-APPLIED PHYSICS, 41, 065105, (2008).
248. "1nm equivalent oxide thickness in Ga₂O₃ (Gd₂O₃) / In_0.2Ga_0.8As metal-oxide-semiconductor capacitors”, K. H. Shiu, T. H. Chiang, P. Chang,L. T. Tung, W. Tsai, J. Kwo*, and M. Hong*, Applied Phys. Letters, 92,172904, (2008).
249. "Achieving one nanometer capacitive effective thickness in atomic layer deposited HfO₂ on In_0.53Ga0_.47As,” K. Y. Lee, Y. J. Lee, P.Chang, M. L. Huang, Y. C. Chang, M. Hong*, and J. Kwo*, Appl. Phys. Letters,92, 252908, (2008).
250. "High-performance self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide- semiconductor field effect transistor with Al₂O₃/Ga₂O₃(Gd₂O₃₎ as gate dielectrics”, T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P.Chen, M. Hong*, J. Kwo*, Y. C. Wang, and W. Tsai, Appl. Phys. Lett, 93,033516, (2008).
251. "Inversion-channel GaN nMOSFET with atomic-layer-deposited Al₂O₃ as gate dielectric”, Y. C. Chang, W. H. Chang, H. C. Chiu, L. T. Tung, C. H.Lee, K. H. Shiu, M. Hong*, and J. Kwo*, Appl. Phys. Lett, 93, 053504(2008).
252. "Achieving a low interfacial of states in atomic layer deposited Al₂O₃ on In_0.53Ga_0.47As”, H. C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C.C. Chang, J. Kwo*, and M. Hong*, Appl. Phys. Lett, 93, 202903, (2008).
253. "Approaching Fermi level unpinning in oxide-In_0.2Ga_0.8As”, T. H.Chiang, W. C. Lee, K. H. Shiu, D. Lin, T. D. Lin, J. Kwo, W. E. Wang , W.Tsai, and M. Hong, IEDM Abstract Digest , San Francisco, Dec. (2008).
254. "Research Advances on III-V MOSFET Electronics Beyond Si CMOS”,J. Kwo* and M. Hong*, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311, 1944(2009).
255. "Depletion-mode InGaAs MOSFET with MBE grown Ga₂O₃(Gd₂O₃) gate dielectric”, C. A. Lin, T. D. Lin, C. H. Chiang, M. Hong*, and J. Kwo*, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug. 4-8, (2008); J. Crystal Growth, 311, 1954 (2009).
256. "MBE grown nm-thick single crystal Sc₂O₃ template on Si for GaN overgrowth”, W. C. Lee, Y. J. Lee, C. H. Lee, S. Y. Wu, J. Kwo*, C. H. Hsu,H. M. Ng, and M. Hong*, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311,2006, (2009).
257. "GaN metal oxide semiconductor diode with MBE-Al₂O₃ as a template followed by ALD growth - Electrical and interfacial characteristics”, Y. H. Chang, H. C. Chiu, W. H. Chang, W. C. Lee, J. Kwo*,and M. Hong*, the 15th International Molecular beam Epitaxy Conference,Vancouver, Canada, Aug 4-8, (2008), J. Crystal Growth, 311, 2084, (2009).
258. "High k dielectrics HCP Gd₂O₃ on GaN with an equivalent oxide thickness approaching 0.5 nm”, W. H. Chang, Y. J. Lee, C. H. Lee, Y. C.Chang, P. Chang M. L. Huang, J. Kwo*, J. M. Hong, and M. Hong*, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8,(2008); J. Crystal Growth, 311, 2183 (2009).
259. "Molecular Beam Epitaxy Grown Al₂O₃/HfO₂High-κ Dielectrics for Germanium”, W. C. Lee, B. H. Chin, C. H. Lee, L. K. Chu, Y. J. Lee, L. T.Tung, T. D. Lin, M. Hong*, and J. Kwo*, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth. 311, 2187 (2009).
260. "Characteristics of Metal-Oxide-Semiconductor devices with MBE-Grown Y₂O₃on Ge(100)”, L. K. Chu, W. C. Lee, C. H. Lee, M. Hong* and J.Kwo*, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311, 2195 (2009).
261. "Inversion Channel Enhancement mode MOSFETs with Regrown Source and Drain Contacts”, C. Liao, D. Cheng, C. Cheng, K. Y. Cheng*, M. Feng, C.H. Chiang, J. Kwo, and M. Hong*, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth,311,(1958).
262. "Energy Band Parameters of Atomic Layer Deposited Al₂O₃ and HfO₂ on InxGa_1-xAs”, M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, J. Kwo*,
  and M. Hong*, Appl. Phys. Lett, 94, 052106 , (2009).
263. "Domain Matching Epitaxial Growth of High-quality ZnO film using an Y₂O₃buffer layer on Si (111)”, W.-R. Liu, Y.-H. Li, and W. F. Hsieh*, C.-H.Hsu*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Crystal Growth Des. 9 (1),239-242 (2009).
264. "Utilization of Ga₂O₃(Gd₂O₃) Gate Dielectric for Ge Metal Oxide Semiconductor Devices without Interfacial and Buffer layers”, L. K. Chu, T. D. Lin, C. H. Lee, L. T. Tung, W. C. Lee, R. L. Chu, C. C. Chang, and M. Hong*, J. Kwo*, Appl. Phys. Lett, 94, 202108, (2009).
265. "Surface Exciton Polariton in HfO₂: Electron Energy-Loss Spectroscopy Study”, S.-C. Liou, M.-W. Chu,* Y.-J. Lee, M. Hong, J. Kwo, and C. H. Chen, New Journal of Physics 11 103009 (2009).
266. "0.5 nm Capacitance Equivalent Thickness in Single Crystal Hexagonal Gd₂O3-dopedwith Ga₂O₃ on GaN”, W. H. Chang, C. H. Lee, Y. C.Chang, P. Chang, M. L. Huang, Y. J. Lee, C.-H. Hsu, J. Kwo*, and M. Hong*,Advanced Materials, 21, 1-5, (2009).
267. "Advances on III-V MOSFET for Science and Technology beyond Si CMOS”, J. Kwo*, T. D. Lin, M. L. Huang, P. Chang, Y. J. Lee, and M. Hong*,"ECS Transactions - San Francisco, CA" Volume 19, "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10", from the San Francisco, CA meeting. Conference, May 24-29, (2009).
268. "InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al₂O₃/Ga₂O₃(Gd₂O₃) as a gate dielectric”, T. D. Lin, H. C. Chiu, P. Chang, W. C. Lee, T. H. Chiang, J. Kwo*, W. Tsai, and M. Hong*, ECS Transactions, vol. 19, Graphene and Emerging Materials for Post-CMOS Applications, San Francisco, CA, May 24-29, (2009).
269. "InGaAs Metal-Oxide-Semiconductor Devices with High k Dielectrics for Science and Technology beyond Si CMOS”, M. Hong*, J. Kwo*,T. D. Lin, and M. L. Huang, MRS Bulletin, 34, 514, (2009).
270. "Neutron Scattering Measurements of Magnetic Excitations in Dy/Y Superlattices”, A. T. D. Grunwald, E. V. Tartakovskaya, A. R. Wildes, W.Schmidt, J. Kwo, C. Majkrzak, R. C. C. Ward, and A. Schreyer, submitted to Phys.Rev. B. Rapid Commun, (2009).
271. "High quality Ga₂O₃(Gd₂O₃) on Ge (100) – electrical and chemical characterizations”, R. L. Chu, L. K. Chu, M. L. Huang, L. T. Tung, T. D. Lin, C. C. Chang, J. Kwo*, and M. Hong*, Conf. Proc. Northern American Molecular beam epitaxy conference, Aug. 10-12, Princeton Univ, NJ, accepted by J. Vac. Sci. Tech. B, (2009).
272. "Monoclinic phase of epitaxial Gd₂O₃ films grown on GaN”, Y. J. Lee, T. Y. Lai, C. H. Lee, P. Chang, S. Y. Wu, C.-H. Hsu, J. Kwo*, and M. Hong*, Conf. Proc. Northern American Molecular beam epitaxy conference, Aug.10-12, Princeton Univ, NJ, accepted by J. Vac. Sci. Tech. B, (2009).
273. "RF characteristics of self-aligned inversion-channelIn_0.53Ga_0.47As MOSFETs using MBE-Al₂O₃/Ga₂O₃(Gd₂O₃) gate dielectrics”, T. D. Lin, P. Chang, H. C. Chiu, J. Kwo*, S. Lin, Shawn S. H. Hsu, and M. Hong*,Conf. Proc. Northern American Molecular beam epitaxy conference, Aug. 10-12,Princeton Univ, NJ, submitted to J. Vac. Sci. Tech. B, (2009).
274. "MBE-HfAlO for passivating InGaAs with 1 nm capacitance effective thickness”, P. Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M. Hong*,and J. Kwo*, Conf. Proc. Northern American Molecular beam epitaxy conference, Aug. 10-12, Princeton Univ, NJ, submitted to J. Vac. Sci. Tech.B, (2009).
275. "Engineering of threshold voltages in MBE-grown Ga₂O₃(Gd₂O₃)/In_0.2Ga_0.8As”, Y. D. Wu, Y. C. Chang, T. D. Lin, T. H. Chiang,J. Kwo*, W. Tsai, and M. Hong*, Conf. Proc. Northern American Molecular beam epitaxy conference, Aug. 10-12, Princeton Univ, NJ, submitted to J. Vac. Sci. Tech. B, (2009).

All Publications (Click Show / Hide)

B. Review Articles:

1. "Tunneling into the Al5 Compounds”, J. Kwo and T. H. Geballe, Physica 109 & 110B, 1665 (1982).
2. "Synthesis of Rare Earth Films and Superlattices”, J. Kwo, in Thin Film Techniques for Low Dimensional Structures", Edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, N. H. Neave and A. S. Arrott, NATO ASI Series B, Physics 13, p. 337, Plenum Publisher Corporation (1987).
3. "Properties of In-situ Superconducting YBa₂Cu₃O_7-x Films By Molecular Beam Epitaxy with an Activated Oxygen Source”, J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, and K. N. Short, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 101, (1989).
4. "Tl-Based Superconducting Films By Sputtering Using a Single Target”, S. H. Liou, M. Hong, A. R. Kortan, J. Kwo, D. D. Bacon, C. H. Chen, R. C. Farrow, and G. S. Grader, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 229, (1989).
5. "Magnetic Rare Earth Superlattices”, C. F. Majkrzak, J. Kwo, M. Hong, Y. Yafet, D. Gibbs, C. L. Chien and J. Bohr, Journal of Advances in Physics, 40, 99-189, (1991).
6. "Growth and Properties of High T_c Films in YBa₂Cu₃O_7-x Perovskite by Molecular Beam Epitaxy”, J. Kwo, in Journal of Crystal Growth, 111, 965, (1991).
7. "Charge Dynamics in Metallic CuO₂ Layers”, B. Batlogg, H. Takagi, H. L. Kao, andJ. Kwo, in Electronic Properties of High Tc Superconductors, The Normal and Superconducting State, Ed. H. Kuzmany et al, Springer Series in Solid-State Sciences, 113, Springer-Verlog, Berlin, Heidelberg (1993).
8. "Semiconductor-Insulator Interfaces”, M. Hong, C. T. Liu, H. Reese, and J. Kwo in "Encyclopedia of Electrical and Electronics Engineering”, 19, p. 87-100, Ed. by J. G. Webster, Published by John Wiley & Sons, New York, (1999).
9. "Materials Characterization of Alternative Gate Dielectrics”, B. W. Busch, O. Pluchery, Y. J. Chabal, D.A. Muller, R. L. Opila, J. Kwo, and E. Garfunkel, Materials Research Bulletin, March 2002, on "Alternative Gate Dielectrics for Microelectronics”, Ed. By G. Wilk, and R. Wallace.
10. "High κ Gate Dielectrics for Si and Compound Semiconductors by MBE”, J. Kwo and M. Hong, Conf. Proc. MRS Fall Meeting, Dec. 2-6, 2002, Boston, MA.
11. "High-quality thin single crystal γ-Al₂O₃ films grown on Si (111)”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, "Tailoring Oxide-Semiconductor Interfaces – an enabling sub-nano approach for new science and next-generation high speed and high power devices” (氧化物-半導體界面控制–次奈米尺寸新興科學解決方案及次世代高速操作高功率元件), in Taiwan Nanotechnology (台灣奈米科技–從 2004 到嚮往的大未來), published by Nano-technology center of Industrial Technology Research Institute, Hsin Chu, Taiwan, 2004.
12. "原子尺寸下氧化物與半導體界面的剪裁控制: 一個在次奈米尺寸底下新穎科學的發現及對次世代高功能元件製造的解決方案”,洪銘輝和郭瑞年,國立清華大學； "Tailoring Oxide-Semiconductor Interfaces – an Enabling Sub-nano Approach for New Science and Advanced Devices”, M. Hong and J. Kwo, to appear in the Electronics Spectrum, the News Lettter of Electron Devices and Materials Association, Taiwain, Ed. Y. H. Wang, vol 10, no. 2, Dec. 2004.
13. "Structure, Composition and Order at Interfaces of Crystalline Oxides and Other Highk Materials on Si ”, T. Gustafsson, R. Garfunkel, L. Goncharova, D. Starodub, R. Barnes, M. Dalponte, G. Bersuker, B. Fordan, D. G. Sholom, V. Vaithyanathan, M. Hong, and J. Kwo, in "Defects in Advanced High k Dielectric Nano-electronic Semiconductor Device”, Ed. E. P. Gusev, Springer, Netherlands, (2005).
14. "High k Gate Dielectrics for Compound Semiconductors, by J. Kwo and M. Hong, chapter 10th in "Advanced Gate Stacks on High-Mobility Semiconductors”, edited by A. Dimoulas, E. P. Gusev, P. McIntyre, M. Heyns, Springer publishing company in the Springer Series Materials Science, (2006).
15. "InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High k Dielectrics for Science and Technology beyond Si CMOS”, M. Hong, J. Kwo, T. D. Lin, M. L. Huang, W. C. Lee, and P. Chang, a book chapter on "High Mobility Channel Semiconductor MOSFET”, Springer Publisher, (2009).

C. Patent:　

1. J. Kwo, by G. E. Books (issued 1995) "Methods for Low temperature Growth of Epitaxial Silicon and Devices Produced Thereby”.
2. Cava, Kwo, and Thomas, by G. E. Books (issued 1996) "Methods for Growing transparent Conducting GaInO3 Films by Sputtering”
3. Carter, Cava, Kwo, Phillips, Thomas, by G. E. Books (issued on 5/13/1997) "Transparent Conductors Comprising Zinc-Indium-Oxide and Methods for Making Films”.
4. Hong 10-7-3-3-15-41, by J. A. Garceran (issued on 10/13/1998) "Article Comprising A Gallium Oxide Layer On A GaAs-Based Semiconductor, And Method of Making the Article”.
5. Cava, Hou, Kwo, Seelig, Watts, by G. E. Books (issued on 9/7/1999) "Methods for Making Thin Film Tantalum Oxide Layers with Enhanced Dielectric Properties and Capacitors Employing Such Layers”.
6. Hong-Kwo-Murphy, by E. E. Pacher (issued on 10/5/1999) "Article Comprising An Oxide Layer On A GaAs-Based Semiconductor Body, And Method of Making the Article”.
7. Hong-Kuo-Kwo-Mannaerts-Wang, by E. E. Packer (issued 1999) "Method of Making an Article Comprising an Oxide Layer on A GaAs-Based Semiconductor Body”.
8. Chen-Cho-Hobson-Hong-Kuo-Kwo-Murphy-Ren, by E. E. Pacher (issued 2000) "Method of Making An article Comprising an Oxide Layer on a GaAs-Based Semiconductor”.
9. Y. K. Chen, A. Y. Cho, W. S. Hobson, M. Hong, J. M. Kuo, J. R. Kwo, D. W. Murphy, and F. Ren, (issued 8/7/2001), "Method of Making An Article Comprising An Oxide Layer On A GaAs-Based Semiconductor Body”, U.S. Patent Number 6271069.
10. Hong-Kortan-Kwo-Mannaerts by W. Koba (issued 6/11/2001), "Si-Bases Field Effect Device with High Dielectric Constant Gate Dielectric”. M. Hong, A. R. Kortan, J. R. Kwo, and J. P. Mannaerts, "High dielectric constant gate oxides for Silicon-based devices”, U.S. Patent Number 6404027.
11. Hong 19-10-16-6 by E E Pacher (issued 10/22/2002), "Article Comprising An Oxide Layer On A GaAs or GaN-Based Semiconductor Body”, U.S. Patent Number 6469357.
12. M. Hong, J. M. Kuo, J. Kwo, J. P. Mannaerts, and Y. C. Wang (issued 12/17/2002), "Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, U.S. Patent Number 6495407.
13. Fleming-Kleiman-Kwo-Osenbach-Thomas by G. E. Books (issued 11/12/2002), "Improved Electro-Optic Device Including a Buffer Layer of Transparent Conducting Material”, U.S. Patent Number 6480633.
14. 洪銘輝、郭瑞年、陳治平、張翔筆、李威縉, "具有單晶氧化鈧接面膜的磊晶用基板之製作方法”, (中華民國 issued 7/2005), No 94123194/NP-19030.
15. 洪銘輝、郭瑞年等, "三-五族金屬氧化物半導體元件製程改進”, 中華民國 and US, pending, 2005.
16. 郭瑞年、洪銘輝、吳彥達、李威縉、張翔筆、李昆育、李毅君, "形成金氧半電晶體元件用之基板的製作方法及其製品”, (中華民國 issued 11/24/2006), No 94141352; US Pending.
17. M. Hong, J. Kwo, C. P. Chen, S. P. Chang, and W. C. Lee, "Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate”, (US patent issued 6/26/2007), No US7235467 B2.

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